Reduce Voltage Drop - Quectel BG95 Manual

Special attention should be paid to the power supply design for BG95/BG96:

If only LTE Cat M1 and Cat NB1 networks are intended to be used, it is recommended to select a
DC-DC chip or LDO chip with ultra-low leakage current and current output no less than 1.0A as the
power supply.

If LTE Cat M1, Cat NB1 and EGPRS networks are all intended to be used, the current output of
DC-DC chip or LDO chip cannot be lower than 2.0A and power supply chips with low leakage current
should be selected because the module needs more current when transmitting in 2G condition.

4.1.2. Reduce Voltage Drop

The power supply range of BG95 and BG96 modules are listed below:

BG96 and BG95-M3/-M5: 3.3V to 4.3V, typ. 3.8V

BG95-M1/-M2/-N1: 2.6V to 4.8V, typ. 3.3V

BG95-M4: typ. 3.8V
Please make sure the input voltage never drop below 3.3V or exceed 4.2V in BG95 and BG96 compatible
design. The VBAT to BG95/BG96 module's VBAT_BB and VBAT_RF pins should be divided into two
separated paths in star structure.
In addition, in order to avoid the damage caused by electric surge and ESD, it is suggested that a TVS
diode with low reverse stand-off voltage (V
reverse peak pulse current (I
The following figure shows a reference design of VBAT for BG95 and BG96.
VBAT
C1
D1
TVS 100uF
BG95&BG96_Compatible_Design
RWM
) should be used.
PP
+
C3 C4
C2
100nF 10pF
33pF
Figure 3: Reference Circuit of VBAT (BG95/BG96)
), low leakage current, low clamping voltage (V
+
C5
C6 C7
100uF 100nF 33pF 10pF
LPWA Module Series
BG95&BG96 Compatible Design
VBAT_RF
VBAT_BB
C8
Module
) and high
C
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