Stg3P2M10N60B Power Module Characteristics; General Features - ST STEVAL-IHM011V1 User Manual

STG3P2M10N60B power module characteristics

Warning:
3 STG3P2M10N60B power module characteristics
The STG3P2M10N60B is a 1-phase bridge rectifier plus a 3-phase inverter IGBT all
included inside a SEMITOP
Figure 3.
● V
CES
●
I = 10 A at 80 °
C
● V
CE(sat)
3.1

General features

●
N-channel very fast PowerMESH™ IGBT
●
Lower on-voltage drop V
●
Lower CRES / CIES ratio (no cross-conduction susceptibility)
●
Very soft ultra fast recovery antiparallel diode
●
High frequency operation up to 70 KHz
●
New generation products with tighter parameter distribution
●
Compact design
●
Semitop
6/27
Do not touch the design boards after disconnection from the
voltage supply, as several parts and power terminals which
contain possibly energized capacitors need to be allowed to
discharge.
®
2 module.
Power module
= 600 V
(max) < 2.5 V at I =7 A T
C
CE(sat)
®
2 is a trademark of Semikron
=25 °C
S
UM0428