Usim Application Guide; Sim Card Design Guide - SimCom SIM7600V-H User Manual

Table 12: USIM Electronic characteristic 3.0V mode (
Symbol Parameter
USIM_
LDO power output voltage
VDD
V High-level input voltage
IH
V Low-level input voltage
IL
V High-level output voltage
OH
V Low-level output voltage
OL
3.5.1

USIM Application Guide

It is recommended to use an ESD protection component such as ESDA6V1W5 produced by ST
(www.st.com ) or SMF15C produced by ON SEMI
peripheral circuit should be close to the USIM card socket.The following figure shows the 6-pin
SIM card holder reference circuit.
Note: USIM_DATA has been pulled up with a100KΩ resistor to USIM_VDD in module. A 100nF
capacitor on USIM_VDD is used to reduceinterference. For more details of AT commands about
USIM, please refer to document [1].
3.5.2

SIM Card Design Guide

SIM card signal could be interferenced by some high frequency signal, it is strongly recommended
to follow these guidelines while designing:
SIM card holder should be far away from antenna

SIM traces should keep away from RF lines, VBAT and high-speed signal lines

The traces should be as short as possible

Keep SIM card holder's GND connect to main ground directly

SIM7600V-H_User Manual_V1.00
Min.
2.75
0.65*USIM_VDD
-0.3
USIM_VDD -0.45
0
Figure 18: USIM interface reference circuit
Smart Machine Smart Decision
USIM_VDD
=2.95V)
Typ.
2.95
-
0
-
0
(www.onsemi.com ). Note that the USIM
29
Max. Unit
3.05 V
USIM_VDD +0.3 V
0.25*USIM_VDD V
USIM_VDD V
0.45 V
2018-02-24