Overview; Features - LAPIS Semiconductor ML610Q174 User Manual

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30. Flash Memory Programming

30.1 Overview

This LSI has ISP (In System Programming) function that allows self-programming using a special function register
(SFR) and remapping the boot area.

30.1.1 Features

The flash memory rewrite function has the following features:
• 1-word write can be used.
• The following two erasing types can be used.
1. Block Erase (Erasing unit : 16K bytes)
Range which can be erased: (0:0000h - 0:BFFFh, 1:0000h - 1:FFFFh, 2:0000h - 2:07FFh)
2. Sector Erase (Erasing unit : 2K bytes).
Range which can be erased: (0:0000h - 0:F7FFh, 1:0000h - 1:FFFFh)
3. Sector Erase (Erasing unit : 1K bytes).
Range which can be erased: (2:0000h - 2:07FFh)
• Rewrite Counts of the flash memory:
Depends on the rewriting address as follows.
Rewriting address
0:0000h – 1:FFFFh
2:0000h –2:07FFh
Note:
*1 Excepted the Test Data Area (0:F800h to 0:FFFFh).
• Software remap function.
4Kbyte of boot area (0:0000H-0:0FFFH) can be remapped by specifying a register.(REMAPADD register)
• The following two erasing types can be used.
1Kbyte of boot area (0:0000H-0:03FFH) can be remapped by setting a external pin (TEST0 pin).
FEUL610Q174-01
Rewrite Count
*1
100
6000
ML610Q174 User's Manual
Chapter 30 Flash Memory Programming
30-1

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