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ON Semiconductor NCP51705 User Manual

Sic driver evaluation board for existing or new pcb designs
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EVBUM2528/D
NCP51705 Mini Evaluation
Board User's Manual
NCP51705 SiC Driver Evaluation Board
for Existing or New PCB Designs
INTRODUCTION
Purpose
This document describes the use and applications for the
NCP51705 SiC driver mini EVB. The EVB is designed on
a four layer PCB and includes the NCP51705 driver and all
the necessary drive circuitry. The EVB also includes an
on−board digital isolator and the ability to solder any
MOSFET or SiC MOSFET in a T0247 high voltage
package. The EVB does not include a power stage and is
generic from the point of view that it is not dedicated to any
particular topology. It can be used in any low−side or
high−side power switching application. For bridge
configurations two or more of these EVBs can be configured
in a totem pole type drive configuration. The EVB can be
considered as an isolator+driver+T0247 discrete module.
NCP51705 Description
The NCP51705 driver is designed to primarily drive SiC
MOSFET transistors. To achieve the lowest possible
© Semiconductor Components Industries, LLC, 2017
December, 2017 − Rev. 0
EVAL BOARD USER'S MANUAL
conduction losses, the driver is capable of delivering the
maximum allowable gate voltage to the SiC MOSFET
device. By providing high peak current during turn−on and
turn−off, switching losses are also minimized. For improved
reliability, dV/dt immunity and even faster turn−off, the
NCP51705 can utilize its on−board charge pump to generate
a user selectable negative voltage rail.
For full compatibility and to minimize the complexity of
the bias solution in isolated gate drive applications the
NCP51705 also provides an externally accessible 5V rail to
power the secondary side of digital or high speed opto
isolators.
The NCP51705 offers important protection functions
such as under−voltage lockout monitoring for the bias power
and thermal shutdown based on the junction temperature of
the driver circuit.
1
www.onsemi.com
Publication Order Number:
EVBUM2528/D

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Summary of Contents for ON Semiconductor NCP51705

  • Page 1 NCP51705 SiC driver mini EVB. The EVB is designed on maximum allowable gate voltage to the SiC MOSFET a four layer PCB and includes the NCP51705 driver and all device. By providing high peak current during turn−on and the necessary drive circuitry. The EVB also includes an turn−off, switching losses are also minimized.
  • Page 2 25 mA CURRENT SENSE UVSET UVLO 5V_OK VDD_OK PROTECTION LOGIC VEE_OK OUTSRC DRIVER INPUT LOGIC OUTSRC LOGIC & LEVEL OUTSNK SHIFT OUTSNK CHARGE PUMP REG CPCLK PGND SGND CHARGE PUMP POWER STAGE PGND Figure 1. NCP51705 Functional Block Diagram www.onsemi.com...
  • Page 3 EVBUM2528/D SUMMARY OF EVB EVB Photos Figure 2. NCP51705 EVB (35 mm x 15 mm x 5 mm) − Top and Bottom View (T0−247 Shown for Scale) www.onsemi.com...
  • Page 4: Evb Schematic

    EVBUM2528/D EVB Schematic Figure 3. NCP51705 EVB Schematic Table 1. BILL OF MATERIALS Item Reference Value Part Number Description Manufacturer Pkg Type C1 C10 2.2 mF CGA4J3X7R1H225M125AE CAP, SMD, CERAMIC, 50 V, C2 C13 100 nF C1005X7R1H104M050BE CAP, SMD, CERAMIC, 50 V,...
  • Page 5 RES, SMD, 1/8 W RMCF0805FT1R00 RES, SMD, 1/8 W R6−8 RES, SMD, 1/10 W 4.99k RC0805FR−074K99L RES, SMD, 1/8 W RC0805FR−0710KL RES, SMD, 1/8 W NCP51705 SiC Driver, Single, 6 A, WQFN−24 Single Semiconductor ADuM142E1WBRQZ Digital Isolator, RF, 4−Chan- Analog QSOP−16 Devices...
  • Page 6 EVBUM2528/D Figure 6. Top Layer Figure 7. Layer 2 Figure 8. Layer 3 www.onsemi.com...
  • Page 7 IN− Input Primary Plated Hole Inverting PWM input 3.3<V <5 (Note 1) Output Primary Plated Hole XEN fault flag or sync signal from NCP51705 Input Secondary Plated Hole NCP51705 VDD <20 Input Secondary Plated Hole NCP51705 secondary ground XGND Input...
  • Page 8 EVBUM2528/D EVB INSTALL CONFIGURATIONS Mounting into Existing PCB − Option 1 The NCP51705, SiC Driver Mini EVB can be mounted plated thru−holes and into the main PCB. Or, if necessary, into an existing power board, shown as “Main PCB” in the gate lead of the T0−247, SiC MOSFET can be soldered...
  • Page 9 Mounting into New PCB Design PWM signal. Make sure there is enough length of The NCP51705, SiC Driver Mini EVB can also be used as the PWM input (flying lead) to reach through the an isolator+driver+T0−247 “driver module” that can be mini EVB plated thru−hole (J3 or J4)
  • Page 10 Mini EVB Mini EVB Main PCB Back View Side View Figure 13. New PCB Design using 100 mil Interconnect Header Pins (80 mil minimum mounting height) Figure 14. NCP51705 SiC Driver Mini EVB PCB Hole Pattern (All Dimensions in mils) www.onsemi.com...
  • Page 11 T0−247 SiC MOSFET can also be soldered in place for Q1 points can be attached. Note that the IN+/IN− PWM and used as a load for the NCP51705. Note that testing amplitude must be equal to the XVDD (5 V). The 20 V DC...
  • Page 12 EVBUM2528/D UVSET internal DESAT threshold is fixed at V =7.5V and DESAT(TH) The UVSET function is set by R2 and determines the the DESAT signal amplitude is adjustable by R11. UVLO turn−on threshold. The EVB is preconfigured with R11 = 4.99 kW may not be the correct resistor value for R2 = 113 kW which equates to UVLO turn−on (V ) of some applications.
  • Page 13 EVBUM2528/D WAVEFORMS Figure 16. IN+ = 150 kHz, 50%, VDESAT = 5 V, DESAT Inactive Figure 17. IN+ = 80 kHz, 50%, VDESAT = 7.5 V, DESAT Active www.onsemi.com...
  • Page 14 EVBUM2528/D Figure 18. IN+ Falling to XEN Rising Delay, tD1 = 83 ns Figure 19. IN+ Rising to XEN Falling Delay, tD2 = 34 ns www.onsemi.com...
  • Page 15 FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized...