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ON Semiconductor NCP5181 User Manual

36 w ballast

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NCP5181BAL36WEVB
NCP5181 36 W Ballast
Evaluation Board User's
Manual
Description
This document describes how the NCP5181 driver can be
implemented in a ballast application. The scope of this
evaluation board user's manual is to highlight the NCP5181
driver and not to explain or detail how to build an electronic
ballast.
The NCP5181 is a high voltage power MOSFET driver
providing two outputs for direct drive of two N-channel
power MOSFETs arranged in a half-bridge (or any other
high-side + low-side topology) configuration.
It uses the bootstrap technique to ensure a proper drive of
the high-side power switch. The driver works with two
independent inputs to accommodate with any topology
(including half-bridge, asymmetrical half-bridge, active
clamp and full-bridge).
Evaluation Board Specification
Input Range: 85 − 145 Vac OR 184 − 265 Vac
Ballast Output Power: 36 W (type PL−L 36 W)
Pre-heating Current: 295 mA
Pre-heating Time: 1 second
Nominal Current: 414 mA
WARNING:
BEFORE PLUGGING IN THE EVALUATION BOARD, MAKE SURE THE JUMPER IS IN THE CORRECT POSITION: IF J2
IS USED, THEN Vin MUST BE LOWER THAN 145 Vac.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 1
Detailed Operation
The lamp ballast is powered via a half bridge
configuration. The two power MOSFETs are driven with the
NCP5181 driver. The driver is supplied by the V
the high side driver is supplied by the bootstrap diode: when
the low side power MOSFET (Q2) is switched ON, the
BRIDGE pin is pulled down to the ground, thus the capacitor
connected between the BRIDGE pin and VBOOT pin is
refuelled via the diode D3 and the resistor R5 connected to
V
CC
supplies the high side driver with a voltage equal to V
level minus D3 forward voltage diode. Given the NCP5181
architecture, it is up to the designer to generate the right input
signal polarity. This includes a dead time to avoid a short
circuit between the high and low side power MOSFET.
The 555 timer generates only one signal for the driver, the
second one, in opposite phase is built by inserting an NPN
transistor (Q4) for inverting the signal. Afterwards, the dead
time is built with R2, D2 and C13 (typically 260 ns, see
Figure 2).
Figure 1. NCP5181 Evaluation Board
1
http://onsemi.com
EVAL BOARD USER'S MANUAL
. When Q2 is switched OFF, the bootstrap capacitor C6
rail, and
CC
CC
Publication Order Number:
EVBUM2141/D

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Summary of Contents for ON Semiconductor NCP5181

  • Page 1 EVAL BOARD USER’S MANUAL Description Detailed Operation This document describes how the NCP5181 driver can be The lamp ballast is powered via a half bridge implemented in a ballast application. The scope of this configuration. The two power MOSFETs are driven with the evaluation board user’s manual is to highlight the NCP5181...
  • Page 2 NCP5181BAL36WEVB DRV_HI (5 V/div) Dead time 260ns DRV_LO (5 V/div) Time (400 ns/div) Figure 2. Dead Time Between the High and Low Side Driver IN_HI (10 V/div) DRV_HI (10 V/div) IN_LO (10 V/div) DRV_LO (10 V/div) Time (4 μs/div) Figure 3. Input Output Timing Diagram Tube Voltage (100 V/div)
  • Page 3 NCP5181BAL36WEVB Figure 5. Evaluation Board Schematic http://onsemi.com...
  • Page 4 NCP5181BAL36WEVB Figure 6. PCB Printout: Top and Bottom View http://onsemi.com...
  • Page 5: Test Procedure

    AC Power Source can be able to deliver 230 V or 110 V Two Volt-meters Two Ampere-meters 1 Resistive Load: 200 W/50 W One NCP5181 Evaluation Board − • Test Procedure Voltmeter and Ampmeter on the Load 1. First of all check if you need jumper #2 (J2 on the •...
  • Page 6 NCP5181BAL36WEVB Table 3. BILL OF MATERIAL FOR THE NCP5181 EVALUATION BOARD Manufacturer Substitution Lead Designator Qty. Description Value Tolerance Footprint Manufacturer Part Number Allowed Free NCP5181 DIP8 ON Semiconductor NCP5181PG CMOS IC Analog/Timer DIP8 Texas Instruments TLC555CP C1, C2 Electrolytic Capacitor...
  • Page 7: Technical Support

    LIMITATIONS OF LIABILITY: ON Semiconductor shall not be liable for any special, consequential, incidental, indirect or punitive damages, including, but not limited to the costs of requalification, delay, loss of profits or goodwill, arising out of or in connection with the board, even if ON Semiconductor is advised of the possibility of such damages. In no event shall ON Semiconductor’s aggregate liability from any obligation arising out of or in connection with the board, under any theory of liability, exceed the purchase price paid for the board, if any.

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