Specifications; Camera Specifications - Hamamatsu Photonics C9100-02 Instruction Manual

C9100-02 Ver.1.7

13. SPECIFICATIONS

13-1 CAMERA SPECIFICATIONS

(1) Electrical Specifications
Camera head type
Imaging device
Effective number of pixels
Cell size
Effective area
Pixel clock rate
Readout noise
(r.m.s.) typ.
Full well capacity typ.
Minimum EM gain typ.
Maximum EM gain typ.
Circuit gain conversion factor typ.
Cooling method
Cooling temperature
A/D converter
Output Signal / External control
Exposure time
Electronic shutter
Binning
Sub-array
External trigger
Offset enhancement
Contrast enhancement
Lens mount
Power requirement
Power consumption
*
1 This value is measured in internal control mode, normal readout scan mode, 32 ms exposure time, minimum EM
gain and with no incident light. At first, the standard deviation is calculated from the image, which is made as the
difference of two images taken in these conditions. Then this readout noise is given the result of the calculation
dividing this standard deviation by squire root of 2, multiply it by the circuit gain conversion factor and divided it by
the value of minimum EM gain.
*
2 Even with electron multiplier gain maximum, dark signal is kept low level for low light imaging.
*
3 The circuit gain conversion factor is the calculated value of transformation coefficient, which is used to convert the
measured image count values into the number of electrons on the multiplication register. The EM gain is necessary
to it into the number of electrons in the image area. And the dark subtraction execution is necessary to use the gain
conversion factor for calculation.
*
4 The hermetic sealed head maintains a high degree of vacuum 10
(2) Frame rates
Frame rate of each binning
and sub-array condition
1×1 binning readout
2×2 binning readout
Frame rate
4×4 binning readout
(frame/s)
8×8 binning readout
16×16 binning readout
16
at minimum EM gain
at maximum EM gain
Effective vertical width (Sub-array)
1000
30.1
57.0
103.0
172.7
262.0
Hermetic vacuum-sealed air-cooled head
Frame transfer CCD
1000 × 1000
(H)
8.0 µm × 8.0 µm
(H)
8.0 mm × 8.0 mm
(H)
35 MHz/pixel
10 electrons *
< 1 electron
70 000 electrons
× 6
× 2000 *
4.4 electrons/ADcounts *
Forced-air peltier cooling with hermetic sealing*
Absolute and stabilized to – 50 °C
@ ambient room temperature 0 °C to + 40 °C
14 bit
CameraLink
100 µs to 10 s
Yes
Yes
Yes
Yes
Yes
No
C-mount
DC + 12 V
Approx. 60 V・A
-7 -8
to 10 Torr, without re-evacuation.
512 256 128
55.8 101.0 169.8
101.0 169.8 257.7
169.8 257.3 347.2
257.7 347.2 420.2
346.0 418.4 467.3
(V)
(V)
(V)
1
2
3
4
64 32 16
257.7 347.2 420.2
347.2 420.2 469.5
420.2 469.5 500.0
469.5 500.0 515.5
497.5 512.8 520.8