Silicon Laboratories SiM3U1xx Manual page 11

Table 3.2. Power Consumption (Continued)
Parameter
2,3
Power Mode 3
2,3
Power Mode 9 —Low Power
Shutdown with VREG0 disabled,
powered through VDD and VIO
2,3
Power Mode 9 —Low Power
Shutdown with VREG0 in low-
power mode, VDD and VIO pow-
ered through VREG0 (Includes
VREG0 current)
VIOHD Current (High-drive I/O dis-
abled)
Notes:
1. Perhipheral currents drop to zero when peripheral clock and peripheral are disabled, unless otherwise noted.
2. Currents are additive. For example, where
functions increases supply current by the specified amount.
I
3. ncludes all peripherals that cannot have clocks gated in the Clock Control module.
4. Includes supply current from internal regulator and PLL0OSC (>48 MHz), USB0OSC (48 MHz) or LPOSC0 (<48 MHz).
5. Flash execution numbers use 2 wait states for 80 MHz, 1 wait state for 48 MHz, and 0 wait states at 20 MHz or less.
6. RAM execution numbers use 0 wait states for all frequencies.
7. IDAC output current and IVC input current not included.
8. Bias current only. Does not include dynamic current from oscillator running at speed.
Symbol Conditions
I V = 1.8 V, T
DD DD
V = 3.0 V, T
DD
I RTC Disabled,
DD
V = 1.8 V, T
DD
RTC w/ 16.4 kHz LFO,
V = 1.8 V, T
DD
RTC w/ 32.768 kHz Crystal,
V = 1.8 V, T
DD
RTC Disabled,
V = 3.0 V, T
DD
RTC w/ 16.4 kHz LFO,
V = 3.0 V, T
DD
RTC w/ 32.768 kHz Crystal,
V = 3.0 V, T
DD
I RTC Disabled,
VREGIN
VREGIN = 5 V, T
RTC w/ 16.4 kHz LFO,
VREGIN = 5 V, T
RTC w/ 32.768 kHz Crystal,
VREGIN = 5 V, T
I HV Mode (default)
VIOHD
LV Mode
I
is specified and the mode is not mutually exclusive, enabling the
DD
Preliminary Rev. 0.8
SiM3U1xx
Min Typ
= 25 °C — 175
A
= 25 °C — 250
A
— 85
= 25 °C
A
— 350
= 25 °C
A
— 620
= 25 °C
A
— 145
= 25 °C
A
— 500
= 25 °C
A
— 800
= 25 °C
A
— 300
= 25 °C
A
— 650
= 25 °C
A
— 950
= 25 °C
A
— 2.5
—
Max Units
— µA
— µA
— nA
— nA
— nA
— nA
— nA
— nA
— nA
— nA
— nA
5 µA
2 — nA
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