Features
■
Low collector-emitter saturation voltage
■
Complementary NPN - PNP transistors
Applications
■
General purpose linear and switching
Description
The devices are manufactured in planar
technology with "base island" layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Table 1.
Device summary
Order codes
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
November 2008
Complementary power Darlington transistors
Figure 1.
Marking
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
Rev 4
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
TO-220
Internal schematic diagrams
NPN: R
= 7 KΩ
1
= 70 Ω
R
2
Package
TO-220
3
2
1
PNP: R
= 16 KΩ
1
= 60 Ω
R
2
Packaging
Tube
1/13
www.st.com
13
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