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EVM User's Guide: LMG3650EVM-114
LMG3650R035 Evaluation Module
Description
The LMG3650EVM-114 features two LMG3650R035
650V GaN FETs with an integrated driver and
protection in a half-bridge configuration with all
the required bias circuit and logic/power level
shifting. Essential power stage and gate-driving, high-
frequency current loops are fully enclosed on the
board to minimize power loop parasitic inductance
for reducing voltage overshoots and improving
performance. The LMG3650EVM-114 is configured
for a socket style external connection for easy
interface with external power stages to run the
LMG3650R035 in various applications. Refer to the
LMG3650R035 data sheet before using this EVM.
SNOU213 – DECEMBER 2024
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Features
•
Two TI 650V GaN in TOLL package arranged in
half bridge configuration
•
Digital isolators for high side fault signal
•
Isolated bias supply and bootstrap supply option
•
Isolated gate driver and open component positions
for layout compatibility to evaluate integrated GaN
TOLL and discrete GaN TOLL
•
Heat sink with fan attached for heat dissipation
during testing
•
Fault protection and reporting for over
temperature, overcurrent, and short circuit events
•
Standard daughter card pinout for compatibility
with TI GaN motherboards
•
Absolute maximum voltage rating of 650V
Applications
•
Merchant network and server PSU
•
Merchant telecom rectifiers
•
Solar inverters and industrial motor drives
•
Uninterruptible power supplies
LMG3650EVM Daughter Card
Copyright © 2024 Texas Instruments Incorporated
Description
LMG3650R035 Evaluation Module
1
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