Using the LMG3411EVM-029 Half-Bridge and LMG34XX-
The LMG3411EVM-029 features two LMG3411R070 600V/12A GaN power transistors with integrated
drivers that are configured in a half bridge with all the required bias circuit and logic/power level shifting.
Essential power stage and gate driving high frequency current loops are fully enclosed on the board to
minimize parasitic inductances, reducing voltage overshoots and improving performance. The
LMG3411EVM-029 is configured to have a socket style external connection for easy interface with
external power stages to run the LMG3411R070 in various applications.
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Low to High Transition Waveform with 480V input, 100kHz, 30% duty cycle, 6A output
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High to Low Transition Waveform with 480V input, 100kHz, 30% duty cycle, 6A output
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LMG3411EVM-029 Inner Copper Layer 2
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LMG34XX-BB-EVM Top Layer and Components
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LMG34XX-BB-EVM Bottom Layer and Components
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Using the LMG3411EVM-029 Half-Bridge and LMG34XX-BB-EVM Breakout
Copyright © 2018, Texas Instruments Incorporated
BB-EVM Breakout Board EVM
Contents
List of Figures
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List of Tables
User's Guide
SNVU637 - October 2018
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Board EVM
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