Cypress CY62158EV30 Specification Sheet

Cypress CY62158EV30 Specification Sheet

Mobl 8-mbit (1024k x 8) static ram

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Features
• Very high speed: 45 ns
— Wide voltage range: 2.20V–3.60V
• Pin compatible with CY62158DV30
• Ultra low standby power
— Typical standby current: 2 µA
— Maximum standby current: 8 µA
• Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
• Easy memory expansion with CE
• Automatic power down when deselected
• CMOS for optimum speed/power
• Offered in Pb-free 48-ball VFBGA, 44-pin TSOP II and
[1]
48-pin TSOP I packages
Logic Block Diagram
CE 1
CE 2
Notes
1. For 48 pin TSOP I pin configuration and ordering information, please refer to CY62157EV30 Data sheet.
2. For best practice recommendations, refer to the Cypress application note "System Design Guidelines" at
Cypress Semiconductor Corporation
Document #: 38-05578 Rev. *D
, CE
, and OE features
1
2
A 0
DATA IN DRIVERS
A 1
A 2
A 3
A 4
A 5
A 6
1024K x 8
A 7
A 8
ARRAY
A 9
A 10
A 11
A 12
COLUMN DECODER
WE
OE
198 Champion Court
CY62158EV30 MoBL
8-Mbit (1024K x 8) Static RAM
Functional Description
The CY62158EV30 is a high performance CMOS static RAM
organized as 1024K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption. Placing the device into standby
mode reduces power consumption significantly when
deselected (CE
HIGH or CE
1
output pins (IO
through IO
) are placed in a high impedance
0
7
state when the device is deselected (CE
the outputs are disabled (OE HIGH), or a write operation is in
progress (CE
LOW and CE
1
2
To write to the device, take Chip Enables (CE
HIGH) and Write Enable (WE) input LOW. Data on the eight
IO pins (IO
through IO
) is then written into the location
0
7
specified on the address pins (A
To read from the device, take Chip Enables (CE
CE
HIGH) and OE LOW while forcing the WE HIGH. Under
2
these conditions, the contents of the memory location
specified by the address pins appear on the IO pins. See the
"Truth Table" on page 8
for a complete description of read and
write modes.
POWER
DOWN
http://www.cypress.com.
,
San Jose
CA 95134-1709
[2]
®
) in
LOW). The eight input and
2
HIGH or CE
LOW),
1
2
HIGH and WE LOW).
LOW and CE
1
through A
).
0
19
LOW and
1
IO 0
IO 1
IO 2
IO 3
IO 4
IO 5
IO 6
IO 7
408-943-2600
Revised April 19, 2007
®
2
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Summary of Contents for Cypress CY62158EV30

  • Page 1 Document #: 38-05578 Rev. *D 8-Mbit (1024K x 8) Static RAM Functional Description The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
  • Page 2: Pin Configurations

    4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document #: 38-05578 Rev. *D Operating I Speed (ns) f = 1 MHz ® CY62158EV30 MoBL 44-Pin TSOPII Top View Power Dissipation (mA) Standby, I (µA) f = f = 25°C.
  • Page 3: Maximum Ratings

    = 25°C, f = 1 MHz, CC(typ) (min) and 200 µs wait time after V stabilization. spec. Other inputs can be left floating. CCDR ® CY62158EV30 MoBL Ambient Range Temperature –40°C to +85°C 2.2V – 3.6V 45 ns Unit + 0.3V + 0.3V...
  • Page 4: Thermal Resistance

    > V or V < 0.2V DATA RETENTION MODE > 1.5V , min > 100 µs or stable at V to V CC(min) CC(min) ® CY62158EV30 MoBL TSOP II Unit °C/W 76.88 °C/W 8.86 13.52 Fall time: 1 V/ns 3.0V Unit Ω...
  • Page 5: Switching Characteristics

    , and t HZCE LZCE HZOE LZOE , and CE . All signals must be ACTIVE to initiate a write and any of these ® CY62158EV30 MoBL 45 ns Unit /2, input CC(typ) is less than t for any given device. HZWE...
  • Page 6: Switching Waveforms

    17. Address valid before or similar to CE transition LOW and CE Document #: 38-05578 Rev. *D [15, 16] DATA VALID , CE transition HIGH. ® CY62158EV30 MoBL DATA VALID HZOE HZCE HIGH IMPEDANCE Page 6 of 11 [+] Feedback...
  • Page 7 LOW simultaneously with WE HIGH, the output remains in high impedance state. 20. During this period, the IOs are in output state. Do not apply input signals. Document #: 38-05578 Rev. *D VALID DATA [14, 18, 19] VALID DATA ® CY62158EV30 MoBL Page 7 of 11 [+] Feedback...
  • Page 8: Ordering Information

    Deselect/Power Down Read Output Disabled Write Package Package Type Diagram 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) 51-85087 44-pin TSOP II (Pb-free) ® CY62158EV30 MoBL LZWE Power Standby (I Standby (I Active (I Active (I Active (I Operating Range...
  • Page 9: Package Diagrams

    Package Diagrams Figure 1. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150 TOP VIEW A1 CORNER 6.00±0.10 SEATING PLANE Document #: 38-05578 Rev. *D CY62158EV30 MoBL BOTTOM VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B Ø0.30±0.05(48X) 1.875 0.75...
  • Page 10 Cypress against all charges. Figure 2. 44-Pin TSOP II, 51-85087 ® CY62158EV30 MoBL 51-85087-*A Page 10 of 11 [+] Feedback...
  • Page 11 Document History Page Document Title: CY62158EV30 MoBL Document Number: 38-05578 Orig. of REV. ECN NO. Issue Date Change 270329 See ECN 291271 See ECN 444306 See ECN 467052 See ECN 1015643 See ECN Document #: 38-05578 Rev. *D ® , 8-Mbit (1024K x 8) Static RAM...

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