Toshiba TLCS-900/H1 Series Manual page 62

NAND Flash Controller AC Characteristics
4.3.4
No. Parameter
1 low width
NDRE
2 data access time
NDRE
3 Read data hold time
low width
4 NDWE
Write data setup time
5
6 Write data hold time
AC measuring conditions
• Output level: High = 0.7 VCC, Low = 0.3 VCC, C
• Input level: High = 0.9 VCC, Low = 0.1 VCC
Note 1: The "n" shown in "Variable" refers to the wait number which is set to NDnFSPR<SPW3:0> register.
Example: When NDnFSPR<SPW3:0> = "0001", t
Note 2: The figures in the "Variable" column cover the whole VCC range (2.7 to 3.6V).
Exceptions are shown by the VCC (min), "(3.0 V)" or " (2.7 V)", added to the "Symbol" column.
SDCLK
A0 to A23
NDRE
NDWE
Read cycle
D0 to D7
NDRE
Write cycle
NDWE
D0 to D7
Variable
Symbol
Min
(1 + n) T − 12
t
RP
t
REA (3.0 V)
t
REA (2.7 V)
t 0
OH
(0.75 + n) T − 20
t
WP
(3.25 + n) T − 30
t
DS
0.25 T − 2
t
DH
= 50 pF
L
RP
t
DS
Data output
92CH21-479
40 MHz 36 MHz 27 MHz Unit
Max
38 43.5
(1 + n) T − 25
25 30.5
(1 + n) T − 30 −
0
17.5 21.6
132.5 150.3
10.5 11.8
= (1 + n) T − 12 = 2T − 12
t
RP
t
OH
Data input
t
REA
t
WP
t
DH
TMP92CH21
62
−
−
44
0 0
ns
35.5
210.5
16.5
2006-09-15