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Rohm TO-247N User Manual
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Rohm TO-247N User Manual

Half-bridge evaluation board
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Generation SiC MOSFET
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Half Bridge Evaluation Board
User's Manual

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Summary of Contents for Rohm TO-247N

  • Page 1 Generation SiC MOSFET Half Bridge Evaluation Board User’s Manual...

  • Page 2: Short Circuit Protection

    TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide <High Voltage Precautions> ◇Before you start operation! This document describes only how to handle evaluation boards for SiC MOSFETs (P04SCT4018KE-EVK-001, P05SCT4018KR-EVK-001). Please refer to the product specifications for detailed information on schematics, BOM, layout, etc.
  • Page 3 SiC MOSFETs. This user guide explains how to handle the evaluation boards for the TO-247N package and TO-247-4L. For detailed information on product specifications, please refer to “4 generation SiC MOSFET Evaluation Board Product Specifications”...
  • Page 4 In addition, this board is designed with the optimum gate drive circuit for "SCT4018KE" or "SCT4018KR" as a default setting, surely other devices in "TO-247N" or "TO-247-4L" packages can also be mounted and evaluated. In this case, change the gate drive circuit constants according to the characteristics of each device, referring to "4.

  • Page 5: Led Display

    TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 2. LED Display The board is equipped with a number of LEDs to make it easy to monitor the board’s operating status. The approximate locations of the LEDs are shown in Figure 2 and their details are shown in Table 2.

  • Page 6: Connector Pin Assignment

    TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide Table 2 LED lights and their meanings Silkscreen LED lighting Details notation The LED lights up when there is a voltage of 20 V or more in the high-voltage power supply HVdc. Never touch the board when this LED is lit, as it may be HV alive lit even when the high-voltage power supply is disconnected.
  • Page 7 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide Table 3 Definition of power supply pins Power supply Signal Details HVdc High-voltage input pin The input pin during buck or inverter operation, but the output pin during boost operation. Power source pin of H-side MOSFET and drain pin of L-side MOSFET This pin is connected in the board and cannot be disconnected.
  • Page 8 The gate drive voltage is supplied by an isolated flyback power supply mounted on-board. This flyback power supply uses a photo-coupler-less control IC (BD7F200EFJ) manufactured by ROHM, and is equipped with transformers that output positive and negative drive voltages on the HS and L-sides, respectively.
  • Page 9 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide © 2022 ROHM Co., Ltd. No. 63UG060E Rev.001 8/27 2022.2...
  • Page 10 Turn-off: H-side R56, D52 L-side R156, D152 Figures 6 (a) and (b) show the mounted state of the gate drive circuits of TO-247N and TO-247-4L, respectively, and Figure 7 shows the circuit diagram of TO-247N. The output signal of the ROHM MOSFET driver IC (BM61M41RFV-C) directly drives the MOSFET via the gate resistor. Since the pattern inductance of the driver circuit affects the surge voltage characteristics of the gate-source signal, it is recommended to keep the wiring length as short as possible, so the circuit is composed of a minimum number of adjustment components.
  • Page 11 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide In the default setting, the turn-on and turn-off adjustment resistors have the same circuit configuration and are adjusted by R55. However, if you want to set individual switching speeds for turn-on and turn-off, mount R56 and transmit the drive signal to the MOSFET through resistor R55 for turn-on, and through D52 and R56 for turn-off.
  • Page 12 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide How to Measure the Device Current 7.1 Measurement with a Rogowski-type current probe This evaluation board has one through-hole (without plating) on each of the HS and L-sides, and a notch on the edge of the board, so that the current flowing to each device can be easily measured using a Rogowski-type current probe.
  • Page 13 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 7.2 Measurement with a coaxial-type shunt resistor Rogowski-type current probes can be used for measurement without breaking up the current path during measurement, so that waveforms can be observed while reproducing the circuit used in the device. On the other hand, the frequency band of the measurement is not very wide.
  • Page 14 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 8. How to Mount the Heat Sink When performing power conversion of several kW using this board, such as when taking efficiency measurements based on the power supply topology, cooling by a heat sink or similar is essential because the power consumption of the device itself reaches several tens of Watts.
  • Page 15 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide Output Bulk Capacitor Heat Sink (Mounted on the solder side) Input Bulk Capacitor Inductor Figure 14 Measurement view of heat sink installation Figure 15 Efficiency (SCT4036KR, BUCK, Rg=3.3Ω) © 2022 ROHM Co., Ltd. No. 63UG060E Rev.001 14/27 2022.2...
  • Page 16 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide Evaluation Board Connection Example 9.1 Double-pulse test for H-side MOSFET Figure 16 shows a double-pulse test circuit using a MOSFET on the H-side. +12V Power PRIMERY SECONDERY HVdc Supply UVLO ICAP VEESEL Vcc1 SGND...
  • Page 17 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 9.2 Double-pulse test with L-side MOSFET Figure 17 shows the double-pulse test circuit using the L-side MOSFET. PRIMERY SECONDERY HVdc UVLO ICAP VEESEL Vcc1 SGND Gate Power VCC2 PGND PGND PGND DUT_HS Vcc1 BD7F200...
  • Page 18 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 9.3 Boost power supply circuit Figure 18 shows the boost operation test circuit in which the L-side MOSFET is switched. PRIMERY SECONDERY HVdc UVLO ICAP VEESEL Vcc1 SGND Gate Power VCC2 PGND PGND PGND...
  • Page 19 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 9.4 Two-level inverter circuit Figure 19 shows the operation test circuit for a 2-level inverter with a half-bridge configuration. PRIMERY SECONDERY HVdc UVLO ICAP VEESEL Vcc1 SGND Gate Power VCC2 PGND PGND PGND Vcc1...
  • Page 20 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 9.5 Synchronous rectification-type buck power circuit Figure 20 shows the buck operation test circuit using an H-side MOSFET. PRIMERY SECONDERY HVdc UVLO ICAP VEESEL Vcc1 SGND Gate Power VCC2 PGND PGND PGND DUT_HS Vcc1...

  • Page 21: Snubber Circuit

    TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 10. Snubber Circuit This board includes a non-discharge-type RCD snubber circuit (*3) layout between drain and source to suppress the turn-off surge of the MOSFET. Figure 21 shows the circuit diagram and an example of its mounting.
  • Page 22 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide The non-discharge snubber circuit is ideal for high-frequency switching circuits because only the surge exceeding the high- voltage input HVdc is consumed by the resistors in the snubber circuit. However, since the pattern layout is complicated, it should be used on boards with four or more layers.
  • Page 23 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 11.1 Types of protection circuits This board has a built-in protection circuit that absorbs surge voltage generated at the gate-source pin of the MOSFET. The protection circuit has three functions (clamp circuit) and four countermeasure circuits as shown in Table 7. Since the gate-...
  • Page 24 GS (C Figure 24 shows an example of a protective circuit mounting. (a) is the board for TO-247N (PCB004P) and (b) is the board for TO-247-4L (PCB005P). Since the pin assignment of the gate pin is opposite for TO-247N and TO247-4L, the protection circuit has the optimal mounting layout for each package.
  • Page 25 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide 11.2 Surge suppression effect of protective circuit A double-pulse test was conducted by connecting SCT4090KR in a bridge configuration and switching the high-side (HS), and the following is an example of how the protective circuit reduces the V surge voltage.
  • Page 26 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide On the other hand, by connecting the mirror clamp signal (MC signal) of the driver IC (BM61M41RFV-C), which is one of the protection circuits, the surge at turn-off can be suppressed. However, since the MC signal needs to respond at high speed, the wiring length to the MOSFET should be made as short as possible.
  • Page 27 TO-247N(-4L) Half-Bridge Evaluation Board User’s Guide References: *1 “Gate-source voltage behavior in a bridge configuration” Application Note (No. 60AN135ERev.002) ROHM Co., Ltd., May 2018 https://fscdn.rohm.com/en/products/databook/applinote/discrete/sic/mosfet/sic-mosfet_gate- source_voltage_an-e.pdf *2 “Gate-Source Voltage Surge Suppression Methods” Application Note (No. 62AN010ERev.002) ROHM Co., Ltd., May 2019 https://fscdn.rohm.com/en/products/databook/applinote/discrete/sic/mosfet/sicmosfet-...
  • Page 28 Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

This manual is also suitable for:

To-247n-4l