[8] Be sure to wear insulated gloves when handling is required during operation. After Use [9] The ROHM Evaluation Board contains circuits which store high voltage. Since it stores charges even after turning off the connected power circuits, please discharge the electricity after using it, and please deal with it after confirming such electric discharge.
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Generation SiC-MOSFET BSMGD3G12D24-EVK001 1.Overview This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3 Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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The Gate drive output voltage is +19V / 0V. ■Fly-back power supply Fly-back power supply consists of ROHM’s Isolated Fly-back Converter (BD7F200EFJ) and transformer. For modification of the output voltage, please check the datasheet of BD7F200EFJ. ■Short Circuit Protection (SCP) When the Drain-Source voltage of SiC module during on state exceeds V , SCP function will be activated.
6.1.1 Peripheral circuits for gate resistors and soft turn-off resistors The SiC-MOSFET is driven by ROHM’s gate driver IC BM60054AFV-C. When the SCP function is activated, the MOSFET will be turned-off slowly (soft turn-off). The turn off time is based on soft turn-off resistors. The schematics are shown in Figure 11 and Figure 6.1.2...
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Specific Applications). Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses, or losses incurred by you or third parties arising from the use of ROHM Products for Specific Applications.
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