Delta DVP-SE Series Instruction Sheet page 3

Model
Item
Noise immunity
Grounding
Operation / storage
Vibration / shock
resistance
Weight (g)
Spec.
Items
Input No.
Input type
Input current (±10%)
Input impedance
Max. frequency
Action Off  On
level
On  Off
Off  On
Response
time
On  Off
Filter time
Spec.
Items
Output No.
Max. frequency
Working voltage
Resistive
Max. load
Inductive
Lamp
Off  On
Response
time
On  Off
#1: UP, ZP must work with external auxiliary power supply 24 VDC (-15 to +20%), rated
consumption approx. 1mA/point.
#2: Life curves
#3: Load = 0.5A
 I/O Configuration
Model
DVP12SE11R
DVP12SE11T
DVP12SE11R
ESD (IEC 61131-2, IEC 61000-4-2): 8kV Air Discharge
EFT (IEC 61131-2, IEC 61000-4-4): Power Line: 2kV, Digital I/O: 1kV,
Analog & Communication I/O: 1kV
RS (IEC 61131-2, IEC 61000-4-3): 26MHz ~ 1GHz, 10V/m
The diameter of grounding wire cannot be smaller than the wire
diameter of terminals L and N (All DVP units should be grounded
directly to the ground pole).
Operation: 0 to 55°C (temp.), 50 to 95% (humidity), Pollution degree 2
Storage: -25 to 70°C (temp.), 5 to 95% (humidity)
International standards: IEC61131-2, IEC 68-2-6 (TEST
Fc)/IEC61131-2 & IEC 68-2-27 (TEST Ea)
24 VDC (-15 to 20%) single common port input
X0 to X2
100 kHz
< 2.5 μs
< 5 μs
Adjustable within 0 ~ 20ms by D1020 (Default: 10ms)
Relay
Y0 to Y3
1 Hz
250 VAC, < 30 VDC
1.5 A/1 point (5 A/COM)
#2
20 WDC/100 WAC
Approx. 10 ms
120 VAC, resistive
3,000
30 VDC, inductive (t=7ms)
2,000
240 VAC, inductive (cos
1,000
500
300
200
100
30 VDC,
inductive
50
(t=40ms)
0.1
0.2 0.3 0.5
Input
Point Type
DC
8
(Sink Or Source)
145
Input Points
DC (SINK or SOURCE)
24 VDC, 5 mA
4.7 kΩ
> 15 VDC
< 5 VDC
Output Points
= 0.4)
ψ
120 VAC, inductive (cos =0.4)
ψ
Contact
current(A)
0.7 1 2
Output
Point Type
Relay
4
Transistor
- 2 -
DVP12SE11T
135
X3 to X7
10 kHz
< 20 μs
< 50 μs
Transistor
Y0, Y2
100 kHz
5 to 30 VDC
0.5 A/1 point (2 A/COM)
15 W (30 VDC)
2.5 W (30 VDC)
#3
2 μs
#3
3 μs
[ Figure 2 ]
I/O Configuration
Relay
S/ S
X0
X1
X2
X3
X4
X5
X6
X7
C 0
Y0
Y1
Y2
Y3
SG
C OM3+
C OM3 -
Y1, Y3
10 kHz
#1
#3
20 μs
#3
30 μs
Transistor
S/ S
X0
X1
X2
X3
X4
X5
X6
X7
Y0
Y1
Y2
Y3
U P
ZP
SG
C OM3 +
C OM3 -