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MT5F33743
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Fuji Electric MT5F33743 Manual
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Table of Contents
1
Table of Contents
2
Maximum Junction Temperature T
3
Short-Circuit Protection
4
Overvoltage Protection and Safety Operation Area
5
Operation Condition and Dead Time Setting
6
Parallel Connections
7
Electrostatic Discharge Countermeasures and Gate Protection
8
ESD Conductive Foam
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Chapter 5
1. Maximum Junction Temperature T
2. Short-Circuit Protection
3. Over Voltage Protection and Safety Operation Area
4. Operation Condition and Dead Time Setting
5. Parallel Connections
6. Electrostatic Discharge Countermeasures and Gate Protection
7. ESD Conductive Foam
MT5F33743
Precautions for Use
vjmax
© Fuji Electric Co., Ltd. All rights reserved.
5-2
5-2
5-2
5-7
5-8
5-9
5-10
5-1
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Summary of Contents for Fuji Electric MT5F33743
Page 1: Table Of Contents
2. Short-Circuit Protection 3. Over Voltage Protection and Safety Operation Area 4. Operation Condition and Dead Time Setting 5. Parallel Connections 6. Electrostatic Discharge Countermeasures and Gate Protection 7. ESD Conductive Foam 5-10 MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 2: Maximum Junction Temperature T
Images of turn-off waveform and reverse recovery waveform are shown in Fig. 5-1 and surge voltage is defined. (a) Turn-off (b) Reverse recovery Fig. 5-1 Turn-off waveform, reverse recovery waveform and surge voltage MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 3
= 400V 150℃、Vcc=400V, = 800A Ic=800A = +15V/-0V Vge=+15V/-0V Cge=56nF = 56nF Ls=30nH = 30nH (Ω) Rg [Ω] Fig. 5-3 An example of gate resistance dependence of surge voltage of reverse recovery MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 4
Pmax=300kW = 300kW 100 200 300 400 500 600 700 800 Collector to emitter voltage Vce [V] Collector to emitter voltage V Fig. 5-5 An example of SOA of FWD part MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 5
= +2.7/-1.8Ω =+2.7/ -1.8Ω Gon/off = 56nF 2800 =56nF = 60nH =30nH 2400 2000 1600 1200 750 1000 1250 1500 1750 2000 time (ns) Fig. 5-6 An example of dynamic avalanche waveform MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 6
Fig. 5-8.) Therefore, because switching loss may be increased, apply the clamp circuit after various confirmations for design of the equipment. Without clamp circuit With clamp circuit Fig. 5-8 Schematic waveform for active clamp circuit MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 7: Operation Condition And Dead Time Setting
C . This current is expressed by C dv/dt. This current is flowed through the gate resistance Fig. 5-9 Principle of unexpected turn-on , results in increasing the gate potential. MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 8: Parallel Connections
Also, when the IGBT module has the cooler with the water jacket, it is necessary to adhere strictly to specifications such as water temperature, water flow and pressure within each water jacket. For more detailed information on parallel connections, refer to Chapter 10 of this manual. MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 9: Electrostatic Discharge Countermeasures And Gate Protection
) of about 10 kΩ be installed between the gate and emitter. it is recommended that a resistor (R C(Collector) G(Gate) E(Emitter) Fig. 5-11 Gate charging from electric potential of collector MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
Page 10: Esd Conductive Foam
Do not remove 2. Moving process the conductive foam Remove the 3. Conductive foam conductive removal foam 4. PCB mounting and control terminal soldering Fig. 5-12 Conductive foam removal procedures 5-10 MT5F33743 © Fuji Electric Co., Ltd. All rights reserved.
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