Key Components In The Eval-M1-2Ed2106S; 650 V Soi Gate Driver - Infineon EVAL-M1-2ED2106S User Manual

EVAL-M1-2ED2106S User Manual
2ED2106S06F drive board for BLDC motor

Key components in the EVAL-M1-2ED2106S

4 Key components in the EVAL-M1-2ED2106S
4.1

650 V SOI gate driver

The 2ED2106S06F is a newly developed high and low-side gate driver using SOI technology, which has many
advantages compared with the commonly used JI parts:
• 650 V offset voltage and +290/-700 mA drive current are suited for general motor driving applications with
universal AC input voltage
• Unique Infineon thin-film, SOI technology
• Integrated ultra-fast, low-resistance bootstrap diode
• Logic is operational up to -11 V on VS pin
• Tolerant to negative transient voltage up to -100 V provided by SOI technology
• Negative voltage tolerance on inputs of -5 V
• dV/dt immune ±50 V
• Maximum supply voltage of 25 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, 15 V input logic-compatible
-40~125 ℃ operating range
• Pin-pin replacement of the JI parts IR2106S/IRS2106S
•
• RoHS-compliant
The features of 2ED2106S06F and the pin-pin replaced JI parts – IR2106S/IRS2106S are compared in Table 6.
Table 6 Features' comparison of the 2ED2106S06F, IR2106S and IRS2106S
Part
Input logic
Max. V (V)
B
Min. V (V)
IN
V UVLO (V), typical
CC
V UVLO (V), typical
BS
t /t (nS), typical
ON OFF
Min. V (V) for logic operation
S
Min. V (V) for transient operation
S
Dead time (nS)
Max. delay matching time MT (nS)
I /I (mA)
O+ O-
Integrated boot diode
User Manual
2ED2106S06F
HIN, LIN
675
-5
9.1/8.2
8.2/7.2
200/200
-11
-100 V
35
290/700
Yes
8 of 29
IR2106S
HIN, LIN
625
-0.3
8.9/8.2
8.9/8.2
220/200
-5
NA
No
30
200/350
No
IRS2106S
HIN, LIN
625
-0.3
8.9/8.2
8.9/8.2
220/200
-5
NA
30
290/600
No
Revision 1.0
2019-09-18