Renesas HSG2005 Specifications page 5

Sige hbt high frequency medium power amplifier
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HSG2005
5.8 GHz Characteristics
Evaluation Board Circuit
VBB : Bias Control
Pin - Pout Characteristics
P
- P
in
25
V
= 3.6 V
CC
I
= 100 mA
idle
20
f = 5.8 GHz
15
10
5
0
0
5
Input Power P in (dBm)
S parameter vs. Frequency
10
S21
0
S22
-10
-20
S12
-30
4
5
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 5 of 12
*1 µF
1000 pF
10 pF
2 pF
0.2 pF
IN
0.5 pF
Characteristics
out
250
P
out
200
I
op
150
100
PG
50
0
10
15
20
V
= 3.6 V
CE
I
= 100 mA
C
S11
6
7
8
10 pF
1000 pF
27 Ω
2 pF
0.5 pF
0.4 pF
3rd. Order Intermodulation Distortion (IMD3)
40
V
= 3.6 V
CE
30
I
= 100 mA
idle
f = 5.8 GHz
20
10
Fundamental
0
(1tone)
-10
-20
-30
IMD3
-40
(2tone: ∆f = 1MHz)
-50
-60
-40
Input Power P
S parameter vs. Frequency
10
S21
0
-10
S22
-20
S12
-30
4
5
Frequency f (GHz)
VCC
*1 µF
OUT
-20
0
20
40
(dBm)
in
V
= 3.6 V
CE
I
= 150 mA
C
S11
6
7
8

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