Renesas HSG2005 Specifications page 4

Sige hbt high frequency medium power amplifier
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HSG2005
2.4 GHz Characteristics
Evaluation Board Circuit
VBB : Bias Control
Pin - Pout Characteristics
P
- P
in
30
V
= 3.6 V
CC
I
= 50 mA
25
idle
f = 2.4 GHz
20
15
10
5
0
-5
-10
-20
-10
Input Power P in (dBm)
S parameter vs. Frequency
20
V
= 3.6 V
CE
I
= 50 mA
C
10
0
-10
S22
-20
S12
-30
-40
1.0
1.5
Frequency f (GHz)
Rev.4.00 Jun 21, 2006 page 4 of 12
*1 µF
1000 pF
C : 1 pF
IN
L : 1.5 nH
C : 1 to 2 pF
Characteristics
out
P out
PG
I op
0
10
20
S21
S11
2.0
2.5
3.0
3.5
4.0
10 pF
10 pF
27 Ω
L : 10 nH
L : 5.6 nH
L : 1.8 nH
3rd. Order Intermodulation Distortion (IMD3)
40
400
30
350
20
300
10
250
0
200
-10
150
-20
100
-30
50
-40
0
-50
-60
20
10
0
-10
-20
-30
-40
VCC
*1 µF
1000 pF
C : 1 pF
C : 0.9 pF
V
= 3.6 V
CE
I
= 50 mA
idle
f = 2.4 GHz
Fundamental
(1tone)
IMD3
(2tone: ∆f = 1MHz)
-40
-20
0
Input Power P
(dBm)
in
S parameter vs. Frequency
V
CE
S21
I
= 150 mA
C
S11
S22
S12
1.5
2.0
2.5
3.0
Frequency f (GHz)
OUT
20
40
= 3.6 V
3.5
4.0

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