Download Print this page

Renesas 3SK318 Specification Sheet page 5

Silicon n-channel dual gate mos fet uhf rf amplifier

Advertisement

3SK318
S11 Parameter vs. Frequency
.6
.4
.2
.2
.4
0
–.2
–.4
–.6
–.8
Test Condition :
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
120°
150°
180°
–150°
–120°
Test Condition :
50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
1
.8
1.5
2
3
4
5
10
.6 .8 1
1.5
2
3 4 5
10
–10
–5
–4
–3
–2
–1.5
–1
V
= 3.5 V , V
= 3 V
DS
G2S
I
= 10mA
D
Scale: 0.002 / div.
90°
60°
30°
–30°
–60°
–90°
V
= 3.5 V , V
= 3 V
DS
G2S
I
= 10mA
D
S21 Parameter vs. Frequency
150°
180°
–150°
–120°
Test Condition :
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.4
.2
0
–.2
–.4
Test Condition :
50 to 1000 MHz (50 MHz step)
Scale: 1 / div.
90°
60°
120°
–60°
–90°
V
= 3.5 V , V
DS
G2S
I
= 10mA
D
1
.8
1.5
.6
.2
.4
.6 .8 1
1.5
2
3 4 5
–2
–.6
–1.5
–.8
–1
V
= 3.5 V , V
DS
G2S
I
= 10mA
D
30°
–30°
= 3 V
2
3
4
5
10
10
–10
–5
–4
–3
= 3 V

Advertisement

loading