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Renesas 3SK318 Specification Sheet page 4

Silicon n-channel dual gate mos fet uhf rf amplifier

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3SK318
Noise Figure vs. Drain Current
5
4
3
2
1
0
5
Drain Current I
Noise Figure vs. Drain to Source Voltage
5
4
3
2
1
0
2
Drain to Source Voltage V
Noise Figure vs. Gate2 to Source Voltage
5
4
3
2
1
0
1
Gate2 to Source Voltage V
Rev.2.00 Aug 10, 2005 page 4 of 7
V
= 3.5 V
DS
V
= 3 V
G2S
f = 900 MHz
10
15
20
25
(mA)
D
V
= 3 V
G2S
I
= 10 mA
D
f = 900 MHz
4
6
8
10
(V)
DS
V
= 3.5 V
DS
f = 900MHz
4
2
3
5
(V)
G2S
Power Gain vs. Drain to Source Voltage
25
20
15
10
V
5
I
D
f = 900 MHz
0
2
4
6
Drain to Source Voltage V
Power Gain vs. Gate2 to Source Voltage
25
V
= 3.5 V
DS
f = 900MHz
20
15
10
5
0
1
2
3
Gate2 to Source Voltage V
= 3 V
G2S
= 10 mA
8
10
(V)
DS
4
5
(V)
G2S

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