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Renesas 3SK318 Specification Sheet page 3

Silicon n-channel dual gate mos fet uhf rf amplifier

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3SK318
Maximum Channel Power
200
150
100
50
0
50
Ambient Temperature Ta (°C)
Gate1 to Source Voltage
20
V
= 3.5 V
DS
16
12
8
4
0
1
Gate1 to Source Voltage V
Forward Transfer Admittance
30
V
= 3.5 V
DS
24
18
12
6
0
0.4
Gate1 to Source Voltage V
Rev.2.00 Aug 10, 2005 page 3 of 7
Dissipation Curve
100
150
200
Drain Current vs.
2.5 V
2.0 V
1.5 V
V
= 1.0 V
G2S
2
3
4
(V)
G1S
vs. Gate1 Voltage
V
= 3 V
G2S
2.5 V
2 V
1.5 V
1 V
0.8
1.2
1.6
2.0
(V)
G1S
20
16
12
8
4
0
20
16
12
8
4
0
5
25
20
15
10
5
0
Typical Output Characteristics
V
= 1.7 V
V
G1S
G2S
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
2
4
6
Drain to Source Voltage V
Drain Current vs.
Gate2 to Source Voltage
V
= 3.5 V
1.8 V
DS
2.0 V
1.6 V
1.4 V
1.2 V
V
= 1.0 V
G1S
1
2
3
Gate2 to Source Voltage V
Power Gain vs. Drain Current
V
DS
V
G2S
f = 900 MHz
5
10
15
Drain Current I
(mA)
D
= 3 V
0.8 V
8
10
(V)
DS
4
5
(V)
G2S
= 3.5 V
= 3 V
20
25

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