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Renesas 3SK318 Specification Sheet
Renesas 3SK318 Specification Sheet

Renesas 3SK318 Specification Sheet

Silicon n-channel dual gate mos fet uhf rf amplifier

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3SK318
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
Note:
Marking is "YB–".
Rev.2.00 Aug 10, 2005 page 1 of 7
2
3
1
4
REJ03G0819-0200
(Previous ADE-208-600)
Rev.2.00
Aug.10.2005
1. Source
2. Gate1
3. Gate2
4. Drain

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Summary of Contents for Renesas 3SK318

  • Page 1 (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) Note: Marking is “YB–“. Rev.2.00 Aug 10, 2005 page 1 of 7...
  • Page 2: Absolute Maximum Ratings

    Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current...
  • Page 3 Maximum Channel Power Dissipation Curve Ambient Temperature Ta (°C) Drain Current vs. Gate1 to Source Voltage = 3.5 V 2.5 V 1.5 V = 1.0 V Gate1 to Source Voltage V Forward Transfer Admittance vs. Gate1 Voltage = 3.5 V Gate1 to Source Voltage V Rev.2.00 Aug 10, 2005 page 3 of 7 2.0 V...
  • Page 4 Noise Figure vs. Drain Current Drain Current I Noise Figure vs. Drain to Source Voltage Drain to Source Voltage V Noise Figure vs. Gate2 to Source Voltage Gate2 to Source Voltage V Rev.2.00 Aug 10, 2005 page 4 of 7 = 3.5 V = 3 V f = 900 MHz...
  • Page 5 S11 Parameter vs. Frequency .6 .8 1 –.2 –.4 –.6 –.8 –1 Test Condition : = 3.5 V , V = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° 150° 180° –150° –120° –90° Test Condition : = 3.5 V , V = 10mA...
  • Page 6 S Parameter Freq. (MHz) MAG. ANG. 1.000 –2.8 0.998 –5.8 0.997 –9.1 0.994 –12.2 0.994 –15.1 0.986 –18.5 0.978 –21.3 0.972 –24.1 0.969 –27.0 0.954 –29.7 0.955 –32.8 0.941 –35.7 0.932 –38.3 0.924 –41.3 0.919 –44.1 0.905 –46.9 0.896 –49.2 0.884 –52.4 0.880...
  • Page 7: Package Dimensions

    Ordering Information Part Name 3SK318YB-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Package Name MASS[Typ.]...
  • Page 8 Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.