Memory Map - Omron V600-HAM42-DRT Operation Manual

Data Carriers (EEPROM, Without Battery)
V600-D23P61/V600-D23P53/V600-D23P54
Item
Memory capacity
Memory type
Data hold time
Data write capacity
Error detection
Operating temperature
Storage temperature
Operating humidity
Degree of protection
Vibration resistance
Shock resistance
Weight (approximate)
V600-D23P61
Mounting holes
(Two, 3.5 dia.)

2-3-2 Memory Map

24
V600-D23P61
254 bytes
EEPROM (electrically erasable programmable random access memory)
10 years (Data will be maintained for 10 years after it is written.)
–25_C to 40_C: 300,000 times per address
–25_C to 70_C: 100,000 times per address
16-bit CRC error detection is used in both directions of transmission.
Data retention: –40 C to 85 C; read/write: –25 C to 70 C
–40 C to 85 C
35% to 95% RH
IEC60529 IP67
10 to 2,000 Hz, 1.5 mm in each direction; acceleration: 300 m/s
30 minutes each in three axis directions, 90 minutes total
2
1,000 m/s (about 100 G) three times each in X, Y, Z directions, total 18 times
5.8 g
V600-D23P53
0
8 mm dia.
–0.1
Case material
Filler
Address
The memory is EEPROM, so there is no limit on the number of times that data
can be read or overwritten.
The memory capacity is 254 bytes, including the write protect setting area
address, 0000 .
H
Model
V600-D23P53
0.4 g
V600-D23P54
12
Two, R1.0
ABS resin
Epoxy resin
1 byte
Write protect setting area
Section 2-3
V600-D23P54
2
(about 30 G);
1.0 g
0
mm dia.
–0.2
User area
(254 bytes)