Samsung VP-L900 Training Manual page 106

6-4 CCD IMAGE SENSOR and Drive circuit
It talks the charge-coupled device which is a kind of semiconductor element.
From one element it was contiguous it talks the element it will be able to transmit an electric charge with the
different element.
6-4-1 VOFD(Vertical Over Flow Drain)
The CCD the Image Sensor ICX280HKM-K with the picture is same.
The SUB (OFD) is planned with hand weaving direction of the CCD chip.
The vertical OVER FLOW DRAIN (VOFD) as Image Sensor of structure it does.
When it sees the advance guard who corresponds to the dotted line from the picture (b) with it is same. It adds
DC bias by the OFD the height of the advance guard wall is decided with automatic movement.
This decides saturation electric charge quantity (QS) from of Image Sensor.
When the advance guard barrier is high, when the QS becomes larger and the advance guard barrier is low, the
QS comes to be small is meaning.
6-4-2 Principal of electronic shutter
The electronic shutter controls the QS realization does to be possible.
Only the duration against a shutter speed inside normal 1/60 second accumulation hour it accomplishes an
electric charge accumulation.
By the voltage which becomes the input in the SUB it controls the accumulation and a purge of resistance from
the ICX280HKM-K.
When sub voltage control it makes a motive in the CCD READ OUT pulse and the electronic shutter is operated.
Samsung Electronics
V RESISTER
CS ROG
(a)
V RESISTER
(b)
V1<V2<V3
Fig. 6-22 Structure of CCD and Advance guard barrier
SENSOR
CS
SUB(OFD)
SENSOR SUB(OFD)
QS
VSUB=V1
VSUB=V3
VSUB=V2
Circuit Operating Description
6-27