NXP Semiconductors MPC5777M Datasheet
Hide thumbs Also See for MPC5777M:
Table of Contents

Advertisement

Quick Links

NXP Semiconductors
Data Sheet: Technical Data
MPC5777M Microcontroller
Data Sheet
• Three main CPUs, single issue, 32-bit CPU core complexes
(e200z7), one of which is a dedicated lockstep core.
®
– Power Architecture
compliance
– Instruction set enhancement allowing variable length
encoding (VLE), encoding a mix of 16-bit and 32-bit
instructions, for code size footprint reduction
– Single-precision floating point operations
– 16 KB Local instruction RAM and 64 KB local data
RAM
– 16 KB I-Cache and 4 KB D-Cache
• I/O Processor, dual issue, 32-bit CPU core complex
(e200z4), with
– Power Architecture embedded specification compliance
– Instruction set enhancement allowing variable length
encoding (VLE), encoding a mix of 16-bit and 32-bit
instructions, for code size footprint reduction
– Single-precision floating point operations
– Lightweight Signal Processing Auxiliary Processing
Unit (LSP APU) instruction support for digital signal
processing (DSP)
– 16 KB Local instruction RAM and 64 KB local data
RAM
– 8 KB I-Cache
• 8640 KB on-chip flash
– Supports read during program and erase operations, and
multiple blocks allowing EEPROM emulation
• 404 KB on-chip general-purpose SRAM including 64 KB
standby RAM (+ 192 KB data RAM included in the
CPUs). Of this 404 KB, 64 KB can be powered by a
separate supply so the contents of this portion can be
preserved when the main MCU is powered down.
• Multichannel direct memory access controllers (eDMA): 2
x 64 channels per eDMA (128 channels total)
• Triple Interrupt controller (INTC)
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
embedded specification
Document Number: MPC5777M
MPC5777M
416 TEPBGA
27mm x 27 mm
– Dual phase-locked loops with stable clock domain for
peripherals and FM modulation domain for
computational shell
• Dual crossbar switch architecture for concurrent access to
peripherals, flash, or RAM from multiple bus masters with
end-to-end ECC
• Hardware Security Module (HSM) to provide robust
integrity checking of flash memory
• System Integration Unit Lite (SIUL)
• Boot Assist Module (BAM) supports factory programming
using serial bootload through 'UART Serial Boot Mode
Protocol'. Physical interface (PHY) can be:
– UART/LIN
– CAN
• GTM104 — generic timer module
• Enhanced analog-to-digital converter system with
– Twelve separate 12-bit SAR analog converters
– Ten separate 16-bit Sigma-Delta analog converters
• Eight deserial serial peripheral interface (DSPI) modules
• Two Peripheral Sensor Interface (PSI5) controllers
• Three LIN and three UART communication interface
(LINFlexD) modules (6 total)
– LINFlexD_0 is a Master/Slave
– LINFlexD_1, LINFlexD_2, LINFlexD_14,
LINFlexD_15, and LINFlexD_16 are Masters
• Four modular controller area network (MCAN) modules
and one time-triggered controller area network
(M-TTCAN)
• External Bus Interface (EBI)
– Dual routing of accesses to EBI
– Access path determined by access address
– Access path downstream of PFLASH controller
– Allows EBI accesses to share buffer and prefetch
capabilities of internal flash
– Allows internal flash accesses to be remapped to
memories connected to EBI
Rev. 6, 06/2016
512 TEPBGA
25 mm x 25 mm

Advertisement

Table of Contents
loading
Need help?

Need help?

Do you have a question about the MPC5777M and is the answer not in the manual?

Questions and answers

Subscribe to Our Youtube Channel

Summary of Contents for NXP Semiconductors MPC5777M

  • Page 1 NXP Semiconductors Document Number: MPC5777M Rev. 6, 06/2016 Data Sheet: Technical Data MPC5777M MPC5777M Microcontroller 416 TEPBGA 512 TEPBGA 27mm x 27 mm 25 mm x 25 mm Data Sheet • Three main CPUs, single issue, 32-bit CPU core complexes –...
  • Page 2: Table Of Contents

    3.13 Aurora LVDS electrical characteristics ... . .73 3.14 Power management: PMC, POR/LVD, sequencing . . .75 3.14.1 Power management electrical characteristics . .75 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 3 • Nexus development interface (NDI) per IEEE-ISTO 5001-2003 standard, with some support for 2010 standard • Device and board test support per Joint Test Action Group (JTAG) (IEEE 1149.1) • Self-test capability MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 4: Introduction

    Introduction Introduction Document overview This document provides electrical specifications, pin assignments, and package diagrams for the MPC5777M series of microcontroller units (MCUs). For functional characteristics, see the MPC5777M Microcontroller Reference Manual. Description This family of MCUs is targeted at automotive powertrain controller and chassis control applications from single cylinder motorcycles at the very bottom end;...
  • Page 5 (SIPI / LFAST ) Interprocessor Communication High speed Interface System timers 8 PIT channels ® 3 AUTOSAR (STM) 64-bit PIT  BOSCH GTM Timer GTM RAM 58 KB Interrupt controller 727 sources ADC (SAR) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 6 Robert Bosch GmbH. 416 TEPBGA package supports development and production applications with the same package footprint. 512 TEPBGA package supports development and production applications with the same package footprint. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 7: Block Diagram

    Block diagram The figures below show the top-level block diagrams.
  • Page 8 Figure 1. Block diagram...
  • Page 9: Package Pinouts And Signal Descriptions

    WKPU Peripheral Bus (AIPS_0) STCU2 JTAGM MEMU CRC_0 10 x DMAMUX 2 x PIT_RTC Figure 2. Periphery allocation Package pinouts and signal descriptions See the MPC5777M Microcontroller Reference Manual for signal information. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 10: Package Pinouts

    Package pinouts The BGA ballmap package pinouts for the 416 and 512 production and emulation devices are shown in the following figures. Figure 3. 416-ball BGA production device pinout (top view)
  • Page 11 Figure 4. 416-ball BGA emulation device pinout (top view)
  • Page 12 Figure 5. 512-ball BGA production device pinout (top view)
  • Page 13 Figure 6. 512-ball BGA emulation device pinout (top view)
  • Page 14: Pin/Ball Descriptions

    F7, F24, G8, G23, AE16, AF16 AC24, AD25, AH29, AJ30 Power High voltage power supply for — — DD_HV_IO_BD buddy die I/O Ground Oscillator ground supply SS_HV_OSC Power JTAG/Oscillator power supply DD_HV_JTAG MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 15: System Pins/Balls

    The value of the TESTMODE pin is latched at the negation of reset and has no affect afterward. Note: The device will not exit reset with the TESTMODE pin asserted during power-up. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 16: Lvds Pins/Balls

    Debug LFAST, LVDS Debug (HSD) / Transmit Positive Terminal LFAST PA[8] DEBUG_TXN Debug LFAST, LVDS Transmit Negative Terminal PA[9] DEBUG_RXP Debug LFAST, LVDS Receive Positive Terminal PA[5] DEBUG_RXN Debug LFAST, LVDS Receive Negative Terminal MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 17 SCK_N DSPI 6 Microsecond Bus Serial Clock, LVDS Negative Terminal PQ[11] SOUT_P DSPI 6 Microsecond Bus Serial Data, LVDS Positive Terminal PQ[10] SOUT_N DSPI 6 Microsecond Bus Serial Data, LVDS Negative Terminal MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 18 Input, LVDS Negative Terminal DRCLK and TCK/DRCLK usage for SIPI LFAST and Debug LFAST are described in the MPC5777M Microcontroller Reference Manual SIPI LFAST and Debug LFAST chapters. Pads use special enable signal form DCI block: DCI driven enable for Debug LFAST pads is transparent to user.
  • Page 19 — CLKP Nexus Aurora High Speed — — AB21 (BD-AGB Trace Clock, LVDS Positive TCLKP) Terminal — CLKN Nexus Aurora High Speed — — AB20 (BD-AGB Trace Clock, LVDS Negative TCLKN) Terminal MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 20: Electrical Characteristics

    Reference to V –0.3 SS_HV_ADR SS_HV SR SAR and S/D ADC high reference Reference to corresponding –0.3 DD_HV_ADR SS_HV_ADR SR Crystal oscillator, FEC MDIO/MDC, Reference to V –0.3 DD_HV_IO_JTAG SS_HV LFAST, JTAG MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 21 Allowed 3.6–4.5 V for 60 seconds cumulative time with no restrictions, for 10 hours cumulative time device in reset, = 150 °C, remaining time at or below 3.6 V. Includes ADC grounds V SS_HV_ADV_S and SS_HV_ADV_D MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 22: Electrostatic Discharge (Esd)

    The device operating conditions must not be exceeded or the functionality of the device is not guaranteed. Table 8. Device operating conditions Value Symbol Parameter Conditions Unit Frequency  40 °C to 150 °C SR Device operating — — frequency MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 23 (LVD/HVD) SR RAM standby supply — — DDSTBY 27,28,29 voltage SR SARADC, SDADC, LVD400 enabled — DD_HV_ADV Temperature Sensor, LVD400 — and Bandgap 30,31,34 disabled Reference supply voltage LVD300 — 6,30,31,33,34 disabled MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 24 The ranges in this table are design targets and actual data may vary in the given range. Maximum operating frequency is applicable to the computational cores and platform for the device. See the Clocking chapter in the MPC5777M Microcontroller Reference Manual for more information on the clock limitations for the various IP blocks on the device.
  • Page 25 I/O and analog input specifications are only valid if the injection current on adjacent pins is within these limits. See the Absolute maximum ratings table for maximum input current for reliability requirements. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 26: Dc Electrical Specifications

    Application use case = 150 °C — — DDAPP_LV operating current on the = 1.325 V DD_LV supply DD_LV Operating current on = 150 — — DD_LV_PE the V supply for DD_LV flash program/erase MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 27 DD_LV_BD 1.32 V, = 55 °C Maximum short term < 20 µs — — SPIKE current spike observation window Current difference ratio 20 µs — — to average current observation (dI/avg(I)) window MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 28 There is an additional 25 mA when FERS = 1 to enable the fast erase time of the flash memory. Data is retained for full T range of -40 °C to 150 °C. RAM supply switch to the standby regulator occurs when the V DD_LV supply falls below 0.95V. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 29: I/O Pad Specification

    Pad impedance is centered around 40  EBI configuration Provides necessary speed for fast external memory interfaces on the EBI address and control signals. Drive strength is matched to four selectable loads. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 30: I/O Input Dc Characteristics

    SR Input low level TTL 4.5 V < V < 5.5 V –0.3 — ILTTL DD_HV_IO — Input hysteresis TTL 4.5 V < V < 5.5 V 0.275 — — HYSTTL DD_HV_IO MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 31 During power up operation, the minimum required voltage to come out of reset state is determined by the V PORUP_HV monitor, which is defined in the voltage monitor electrical characteristics table. Note that the V monitor is PORUP_HV connected to the V physical I/O segment. DD_HV_IO_MAIN0 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 32 — — DD_HV_IO 4.5 V < V < 5.5 V DD_HV_IO = 0.35* V (CMOS) — DD_HV_IO 4.5 V < V < 5.5 V DD_HV_IO CC Weak pull-up — — k resistance MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 33 Reset electrical characteristics table of Section Reset pad (PORST, ESR0) electrical DD_POR characteristics in this Data Sheet. Weak pull-up behavior during power-up. Operational with V > V DD_HV_IO DD_POR MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 34: I/O Output Dc Characteristics

    1. Actual PAD slopes will depend on external capacitances and VDD_HV_IO supply. Figure 8. Weak pull-up electrical characteristics definition 3.6.2 I/O output DC characteristics The figure below provides description of output DC electrical characteristics. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 35 DD_HV_IO weak configuration Push pull, I < 0.5 mA  CC NMOS output impedance 4.5 V < V < 5.5 V 1052 OL_W DD_HV_IO weak configuration Push pull, I < 0.5 mA MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 36 OH_M DD_HV_IO MEDIUM configuration Push pull, I < 2 mA  CC NMOS output impedance 4.5 V < V < 5.5 V OL_M DD_HV_IO MEDIUM configuration Push pull, I < 2 mA MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 37 (ns) = 13 ns + C (pF) 0.96 ns/pF TR_M Only for V segment when VSIO[VSIO_IJ] = 0 or V segment when VSIO[VSIO_IF] = 0 DD_HV_IO_JTAG DD_HV_IO_FLEX Table 16 shows the STRONG configuration output buffer electrical characteristics. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 38 (pF) x 0.23 ns/pF. TR_S Only for V segment when VSIO[VSIO_IJ] = 0 or V segment when VSIO[VSIO_IF] = 0 DD_HV_IO_JTAG DD_HV_IO_FLEX Table 17 shows the VERY STRONG configuration output buffer electrical characteristics. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 39 = 3.3 V ± 10%, — — DD_HV_IO = 15 pF t  CC Difference between rise and = 5.0 V ± 10%, — SKEW_V DD_HV_IO fall time at 20–80% = 25 pF MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 40 External Bus output pins t CC Difference between rise and fall — — — SKEW_EB  time CC Maximum DC current — — — DCMAX_E GPIO Mode Output Specifications - MSCR[OERC] = b100 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 41: I/O Pad Current Specification

    IR drop as defined in the I/O Signal Description table, must be below 50 %. See the I/O Signal Description attachment. NOTE The MPC5777M I/O Signal Description and Input Multiplexing Tables are contained in a  Microsoft Excel workbook file attached to this document.
  • Page 42 = 3.3 V ± 10% DD_HV_IO_EBI = 18 pF, f = 66.7 MHz, — — = 3.3 V ± 10% DD_HV_IO_EBI = 30 pF, f = 66.7 MHz, — — = 3.3 V ± 10% DD_HV_IO_EBI MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 43 I/O current consumption specifications for the 4.5 V <= V <= 5.5 V range are valid for VSIO_[VSIO_xx] = 1, DD_HV_IO and VSIO[VSIO_xx] = 0 for 3.0 V <= V <= 3.6 V. DD_HV_IO MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 44: Reset Pad (Porst, Esr0) Electrical Characteristics

    . Device state is unknown: it may either be reset or remains in current NFRST state depending on other factors (temperature, voltage, device). c) PORST asserted for longer than W . Device is under reset. NFRST MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 45 (Schmitt trigger) +0.4 SR Input low level TTL — –0.4 — (Schmitt trigger) CC Input hysteresis TTL — — — (Schmitt trigger) CC Minimum supply for strong — — — DD_POR pull-down activation MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 46 PHASE0, PHASE1, PHASE2, and the beginning of PHASE3 for ESR0. NOTE PORST can optionally be connected to an external power-on supply circuitry. NOTE No restrictions exist on reset signal slew rate apart from absolute maximum rating compliance. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 47: Oscillator And Fmpll

    PLL0_PHI single period jitter = 400 MHz, — — PLL0PHISPJ PLL0PHI 6-sigma = 20 MHz (resonator) PLL0IN  PLL0_PHI1 single period jitter = 40 MHz, — — PLL0PHI1SPJ PLL0PHI1 6-sigma = 20 MHz (resonator) PLL0IN MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 48 FINE LOCK state — — PLL1 PLL1IN clock retrieved directly from either internal PLL0 or external XOSC clock. Input characteristics are granted when using internal PLL0 or external oscillator is used in functional mode. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 49 The current after oscillation is typically in the 2–3 mA range and is dependent on the load and series resistance of the crystal. Test circuit is shown in Figure MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 50 Capacitance values vary ±12% across process, 0.25% across voltage, and no variation across temperature. Values in this table do not include the die and package capacitances given by Cs_xtal/Cs_extal in Table 23 (External Oscillator electrical specifications). MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 51 CCCU (CAN clock control Unit), extracting reference clock from CAN master clock. Software trim must be repeated as the device operating temperature varies in order to maintain the specified accuracy. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 52: Adc Specifications

    C Sampling Capacitance Common mode switch CMSW: Common mode resistive ladder The above figure can be used as approximation circuitry for external filtering definition. Figure 15. Input equivalent circuit (SARB channels) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 53: Sar Adc Electrical Specification

    Safety pull-down is available for port pin PB[5] and PE[14]. 3.10.2 SAR ADC electrical specification The SARn ADCs are 12-bit Successive Approximation Register analog-to-digital converters with full capacitive DAC. The SARn architecture allows input channel multiplexing. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 54 Run mode t — µA ADCREFL conv current <= 5.5 V DD_HV_ADR_S Run mode t = 2.5 µs — conv <= 5.5 V DD_HV_ADR_S Power Down mode — <= 5.5 V DD_HV_ADR_S MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 55 > 4 V DD_HV_ADR_S < 150 °C, –6 > 4 V, DD_HV_ADV_S 4 V > V > 2 V DD_HV_ADR_S < 150 °C, –12 4 V > V > 3.5 V DD_HV_ADV_S MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 56 ADCREFH ADCREFL driven by the transfer of charge between internal capacitances during the conversion. Current parameter values are for a single ADC. Extra bias current is present only when BIAS is selected. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 57: S/D Adc Electrical Specification

     50 °C After calibration, V  — — DD_HV_ADR_D V  10% DD_HV_ADV_D T  100 °C After calibration, V  — — DD_HV_ADR_D V  10% DD_HV_ADV_D T  150 °C MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 58 4.5 < V < 5.5 — — DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D GAIN = 8 < 150 °C 9,10,17 4.5 < V < 5.5 — — DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D GAIN = 16 < 150 °C MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 59 < 150 °C SFDR CC Spurious free GAIN = 1 — — dynamic range GAIN = 2 — — GAIN = 4 — — GAIN = 8 — — GAIN = 16 — — MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 60 — ADCD_S ADCD_S [1.5 * f , 2.0 * f — — ADCD_S ADCD_S [2.0 * f , 2.5 * f — — ADCD_S ADCD_S [2.5 * f — — ADCD_S ADCD_M MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 61  CC Latency between HPF = ON — — — LATENCY GROUP input data and ADCD_S converted data when  HPF = OFF — — — GROUP input mux does not change MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 62 4.5 V < V < 5.5 V DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D Tj < 150 °C Gain = 16 64.8 — — 4.5 V < V < 5.5 V DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D Tj < 150 °C MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 63 4.5 V < V < 5.5 V DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D Tj < 150 °C Gain = 16 — — 4.5 V < V < 5.5 V DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D Tj < 150 °C MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 64 4.5 V < V < 5.5 V DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D Tj < 150 °C Gain = 16 — — 4.5 V < V < 5.5 V DD_HV_ADV_D DD_HV_ADR_D DD_HV_ADV_D Tj < 150 °C MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 65 This parameter is guaranteed by bench validation with a small sample of typical devices, and tested in production to a value of 6 dB less. Input impedance in differential mode Z (input impedance) = Z DIFF MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 66: Temperature Sensor

    The LFAST pad electrical characteristics apply to both the SIPI and high-speed debug serial interfaces on the device. The same LVDS pad is used for the Microsecond Channel (MSC) and DSPI LVDS interfaces, with different characteristics given in the following tables. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 67: Lfast Interface Timing Diagrams

    PER Data Bit Period T = 1 /F DATA Min. common mode input at RX 150 mV Signal excursions below this level NOT allowed Figure 16. LFAST and MSC/DSPI LVDS timing definition MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 68: Lfast And Msc/Dspi Lvds Interface Electrical Characteristics

    Table 30. LVDS pad startup and receiver electrical characteristics Value Symbol Parameter Conditions Unit STARTUP CC Bias current reference startup time — — µs STRT_BIAS CC Transmitter startup time (power — — 2.75 µs PD2NM_TX down to normal mode) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 69 + 2 peripheral bridge clock periods. Bias PD2SM_RX block remains enabled in sleep mode. Absolute min = 0.15 V – (285 mV/2) = 0 V Absolute max = 1.6 V + (285 mV/2) = 1.743 V MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 70 The MSC and DSPI LVDS pad electrical characteristics are based on the application circuit and typical worst case internal capacitance values given in Figure All MSC and DSPI LVDS pad electrical characteristics are valid from –40 °C to 150 °C. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 71: Lfast Pll Electrical Characteristics

    –1 — CC PLL input reference clock duty cycle — — CC Integrated phase noise (single side band) = 20 MHz — — –58 RF_REF = 10 MHz — — –64 RF_REF MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 72: Aurora Lvds Electrical Characteristics

    SR Transmission line length — — — LINE  SR Transmission line characteristic impedance — LINE SR Clock Receive Pin External AC Coupling Values are nominal, valid — ac_clk Capacitance for +/– 50% tolerance MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 73 ) = 99 ohm to 101 ohm. The differential output voltage swing tracks with the value of R Transmission line loss maximum value is specified for the maximum drive level of the Aurora transmit pad. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 74: Power Management: Pmc, Por/Lvd, Sequencing

    In order to ensure correct functionality of the device, it is recommended to follow below integration scheme. HV_PMC HV_FLA VDD_HV_IO VDD_LV MPC5777M HV_IO (1) One capacitance near each V DD_LV (2) One capacitance near each V DD_HV Figure 20. Recommended supply pin circuits MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 75: Flash Supply

    If the auxiliary regulator actively provides current, the min value may go lower than 3.1 V drop to IR drop caused by auxiliary current demanding on VDD_HV_REG supply. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 76: Device Voltage Monitoring

    1015 — 1145 LVD096 monitoring CC Core LV internal supply low voltage See note 1150 — 1220 LVD108 monitoring CC LV external supply low voltage See note 1175 — 1235 LVD112 monitoring MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 77 LV internal supply levels are measured on device internal supply grid after internal voltage drop. LVD is released after t temporization when upper threshold is crossed, LVD is asserted t after VDRELEASE VDASSERT detection when lower threshold is crossed. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 78: Power Up/Down Sequencing

    Above current constraints is guaranteed. DD_HV_FLA ADC performances is not guaranteed with ALTREFn above V DD_HV_IO DD_HV_ADV During power-up, all functional terminals are maintained into a known state as described within the following table. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 79: Flash Memory Electrical Characteristics

    Flash memory program and erase specifications NOTE All timing, voltage, and current numbers specified in this section are defined for a single embedded flash memory within an SoC, and represent average currents for given supplies and operations. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 80 Typical End of Life program and erase times represent the median performance and assume nominal supply values. Typical End of Life program and erase values may be used for throughput calculations.  150°C; full spec voltage. Conditions: -40°C T MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 81: Flash Memory Fers Program And Erase Specifications

    Typical program and erase times represent the median performance and assume nominal supply values and operation at 25 °C. Typical program and erase times may be used for throughput calculations. Plant Programming times provide guidance for timeout limits used in the factory. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 82: Flash Memory Array Integrity And Margin Read Specifications

    The units for Array Integrity are determined by the period of the system clock. If unit accurate period is used in the equation, the results of the equation are also unit accurate. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 83: Flash Memory Module Life Specifications

    Graphically, Data Retention versus Program/Erase Cycles can be represented by the following figure. The spec window represents qualified limits. The extrapolated dotted line demonstrates technology capability, however is beyond the qualification limits. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 84: Flash Memory Ac Timing Specifications

    Flash read wait state and address pipeline control settings Table 45 describes the recommended RWSC and APC settings at various operating frequencies based on specified intrinsic flash access times of the C55FMC array at 150 °C. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 85: Ac Specifications

    = 4.0 V to 5.5 V, and maximum loading per pad type as specified in the DD_HV_IO_JTAG I/O section of the data sheet. Timing includes TCK pad delay, clock tree delay, logic delay and TDO output pad delay. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 86 Applies to all pins, limited by pad slew rate. Refer to IO delay and transition specification and add 20 ns for JTAG delay. Figure 22. JTAG test clock input timing TMS, TDI Figure 23. JTAG test access port timing MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 87 Electrical characteristics JCOMP Figure 24. JTAG JCOMP timing MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 88 CC Absolute minimum TCK cycle time (TDO/TDOC sampled on posedge of — TCYC TCK) Absolute minimum TCK cycle time (TDO/TDOC sampled on negedge of — TCK) CC TDI/TDIC data setup time — NTDIS MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 89 TDOC represents the TDO bit frame of the scan packet in compact JTAG 2-wire mode. Timing includes TCK pad delay, clock tree delay, logic delay and TDO/TDOC output pad delay. EVTI EVTO Figure 26. Nexus event trigger and test clock timings MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 90 Startup time is defined as the time taken by LVDS transmitter for settling after its pwr_down (power down) has been deasserted. Here it is assumed that current reference is already stable (see Bias start-up time). LVDS functionality is guaranteed only after the startup time. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 91 SR Transmit lane total jitter — 0.35 CC Differential output skew — CC Lane to lane output skew — 1000 CC Aurora lane unit interval 625 Mbps 1600 1600 1.25 Gbps ± 100 PPM MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 92 Electrical characteristics CLOCK Zero Crossover CLOCK Tx Data Ideal Zero Crossover Tx Data Tx Data [n] Zero Crossover Tx Data [n+1] Zero Crossover Tx Data [m] Zero Crossover Figure 28. Aurora timings MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 93: Dspi Timing With Cmos And Lvds Pads

    PCS = 50 pF × t ) – 29 — and SCK strong SCK = 50 pF 1. DSPI in TSB mode with LVDS pads can be used to implement Micro Second Channel bus protocol. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 94 CC SOUT data valid SOUT and SCK drive strength time from SCK Very strong 25 pF — Strong 50 pF — Medium 50 pF — 16.0 SOUT data hold time (after SCK edge) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 95 Input timing assumes an input slew rate of 1 ns (10% – 90%) and uses TTL / Automotive voltage thresholds. SOUT Data Valid and Data hold are independent of load capacitance if SCK and SOUT load capacitances are the same value. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 96 SCK Output (CPOL = 0) SCK Output (CPOL = 1) Data First Data Last Data SOUT Data First Data Last Data Figure 30. DSPI CMOS master mode – classic timing, CPHA = 1 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 97 SCK SCK = 50 pF strong CC SCK duty cycle SCK drive strength Very strong 0 pF – 2 Strong 0 pF – 2 Medium 0 pF – 5 PCS strobe timing MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 98 SOUT and SCK drive strength time from SCK Very strong 25 pF — CPHA = 1 Strong 50 pF — Medium 50 pF — 16.0 SOUT data hold time (after SCK edge) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 99 DSPI_MCR[SMPL_PT]. The value must be 0, 1 or 2. If the baud rate divide ratio is /2 or /3, this value is automatically set to 1. SOUT Data Valid and Data hold are independent of load capacitance if SCK and SOUT load capacitances are the same value. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 100 SCK Output (CPOL = 0) SCK Output (CPOL = 1) Data First Data Last Data SOUT Data First Data Last Data Figure 33. DSPI CMOS master mode – modified timing, CPHA = 1 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 101 15 pF 23 – (P × t — CPHA = 0 to 25 pF differential SIN setup time to SCK drive strength LVDS 15 pF — CPHA = 1 to 25 pF differential MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 102 P is the number of clock cycles added to delay the DSPI input sample point and is software programmable using DSPI_MCR[SMPL_PT]. The value must be 0, 1 or 2. If the baud rate divide ratio is /2 or /3, this value is automatically set to 1. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 103 All timing values for output signals in this table, are measured to 50% of the output voltage. All output timing is worst case and includes the mismatching of rise and fall times of the output pads. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 104 SCK Output (CPOL = 0) SCK Output (CPOL = 1) Data First Data Last Data Data SOUT Last Data First Data Figure 36. DSPI LVDS master mode – modified timing, CPHA = 1 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 105 Condition Value Symbol Characteristic Unit Pad drive Load (C CC SCK cycle time SCK drive strength Very strong 25 pF 33.0 — Strong 50 pF 80.0 — Medium 50 pF 200.0 — MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 106 With TSB mode or Continuous SCK clock mode selected, PCS and SCK are driven by the same edge of DSPI_CLKn. This timing value is due to pad delays and signal propagation delays. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 107 (SS inactive to SOUT High-Z Strong 50 pF — or invalid) Medium 50 pF — CC Data Setup Time for Inputs — — — CC Data Hold Time for Inputs — — — MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 108 (CPOL=0) SCK Input (CPOL=1) First Data Data Last Data SOUT Data First Data Last Data Figure 38. DSPI Slave Mode - Modified transfer format timing (MFTE = 0/1) — CPHA = 0 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 109: Fec Timing

    CC RX_CLK pulse width high RX_CLK period CC RX_CLK pulse width low RX_CLK period All timing specifications are referenced from RX_CLK = 1.4 V to the valid input levels, 0.8 V and 2.0 V. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 110 TX_CLK, and the timing is the same in either case. This options allows the use of non-compliant MII PHYs. Refer to the MPC5777M Microcontroller Reference Manual’s Fast Ethernet Controller (FEC) chapter for details of this option and how to enable it.
  • Page 111 All timing specifications are referenced from MDC = 1.4 V (TTL levels) to the valid input and output levels, 0.8 V and 2.0 V (TTL levels). For 5 V operation, timing is referenced from MDC = 50% to 2.2 V/3.5 V input and output levels. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 112 CC REF_CLK pulse width high REF_CLK period CC REF_CLK pulse width low REF_CLK period All timing specifications are referenced from REF_CLK = 1.4 V to the valid input levels, 0.8 V and 2.0 V. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 113 The internal package capacitance is accounted for, and does not need to be subtracted from the 25 pF value. REF_CLK (input) TXD[1:0] (outputs) TX_EN Figure 45. RMII transmit signal timing diagram MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 114: Flexray Timing

    CC Sum of delay between Clk to Q of the last FF and the final output buffer, — rising edge dCCTxEN CC Sum of delay between Clk to Q of the last FF and the final output buffer, — falling edge TxEN pin load maximum 25 pF MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 115 Electrical characteristics PE_Clk TxEN dCCTxEN dCCTxEN Figure 47. TxEN signal propagation delays 3.16.4.2 dCCTxD 80 % 50 % 20 % dCCTxD dCCTxD RISE FALL Figure 48. TxD signal MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 116 = 3.3 V ± 10%, Transmission line Z = 50 ohms, t = 0.6 ns, C = 10 pF DD_HV_IO delay PE_Clk dCCTxD dCCTxD * FlexRay Protocol Engine Clock Figure 49. TxD Signal propagation delays MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 117: Psi5 Timing

    SDOUT_PSI5_n pin 1 PBRIDGEn_CLK) Measured in PSI5 clock cycles (PBRIDGEn_CLK on the device). Minimum PSI5 clock period is 20 ns. 3.16.6 UART timing UART channel frequency support is shown in the following table. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 118: External Bus Interface (Ebi) Timing

    CLKOUT Posedge to Output Signal Invalid or High Z — (Hold Time) ADDR[12:31] ADDR[8:11]/WE[0:3]/BE[0:3] BDIP CS[0:3] DATA[0:31] RD_WR CLKOUT Posedge to Output Signal Valid (Output — Delay) ADDR[12:31] ADDR[8:11]/WE[0:3]/BE[0:3] BDIP CS[0:3] DATA[0:31] RD_WR MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 119 One wait state must be added for all write accesses to external memories at the maximum external bus frequency. One wait state must be added to the outut signal valid delay for external writes. OH_F DD_HV_IO_EBI OL_F D_CLKOUT Figure 50. D_CLKOUT Timing MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 120 Electrical characteristics D_CLKOUT DD_HV_IO_EBI Output DD_HV_IO_EBI Output DD_HV_IO_EBI Signal Output DD_HV_IO_EBI Signal Figure 51. Synchronous Output Timing MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 121: I2C Timing

    CC Start condition hold time — PER_CLK Cycle — CC Clock low time — PER_CLK Cycle — CC Bus free time between Start and Stop condition — µs — CC Data hold time — MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 122 The actual position is affected by the pre-scale and division values programmed in the IBC field of the IBFD register. PER_CLK is the SoC peripheral clock, which drives the I C BIU and module clock inputs. See the Clocking chapter in the device reference manual for more detail. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 123: Gpio Delay Timing

    The following table lists the case numbers for each available package for the device. Table 73. Package case numbers Package Type Device Type Case Outline Number 416TEPBGA Production 98ARE10523D 416TEPBGA Emulation 98ASA00493D 512TEPBGA Production or Emulation 98ASA00262D MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 124: 416 Tepbga (Production) Case Drawing

    Electrical characteristics 3.17 416 TEPBGA (production) case drawing Figure 54. 416 TEPBGA (production) package mechanical drawing (Sheet 1 of 2) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 125 Electrical characteristics Figure 55. 416 TEPBGA (production) package mechanical drawing (Sheet 2 of 2) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 126: 416 Tepbga (Emulation) Case Drawing

    Electrical characteristics 3.18 416 TEPBGA (emulation) case drawing Figure 56. 416 TEPBGA (emulation) package mechanical drawing (Sheet 1 of 3) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 127 Electrical characteristics Figure 57. 416 TEPBGA (emulation) package mechanical drawing (Sheet 2 of 3) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 128 Electrical characteristics Figure 58. 416 TEPBGA (emulation) package mechanical drawing (Sheet 3 of 3) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 129: 512 Tepbga Case Drawing

    Electrical characteristics 3.19 512 TEPBGA case drawing Figure 59. 512 TEPBGA package mechanical drawing (Sheet 1 of 2) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 130 Electrical characteristics Figure 60. 512 TEPBGA package mechanical drawing (Sheet 2 of 2) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 131: Thermal Characteristics

    The difference between the values determined for the single-layer (1s) board compared to a four-layer board that has two signal layers, a power and a ground plane (2s2p), demonstrate that the effective thermal resistance is not a constant. The thermal resistance depends on the: MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 132 This model can be used to generate simple estimations and for computational fluid dynamics (CFD) thermal models. More accurate compact Flotherm models can be generated upon request. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 133: Ordering Information

     = thermal characterization parameter ( C/W) = power dissipation in the package (W) Ordering information Table 75 shows the orderable part numbers for the MPC5777M series. Table 75. Orderable part number summary Part Number Device Type Package PPC5777MK0MVU8B Sample...
  • Page 134 EDs are provided “as is" without warranty of any kind. In the event of a suspected ED failure, NXP agrees to exchange the suspected failing ED from the customer at no additional charge; however, NXP will not analyze ED returns. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 135 A = cut2.0 revision K = –40 °C to 135 °C T = Tape Fab and Mask Revision R = Reel F = ATMC K = TSMC 0 = Revision Figure 61. Product code structure MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 136: Document Revision History

    The device will not exit reset with the TESTMODE pin asserted during power-up.” (Added detail regarding when TESTMODE pin value is latched and that device will not exit reset when pin is asserted during power-up) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 137 • Footnote V changed: “1.32 – 1.375 V range allowed periodically for supply with DD_LV sinusoidal shape and average supply value below 1.288 V at maximum T = 165 °C” (was 1.275) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 138 Table 8 (Device operating conditions) • Changed VSTBY_BO minimum from 0.7V to 0.8V. Electrical characteristics—DC electrical specifications Table 10 (DC electrical specifications) • Replaced table; significant changes throughout, including parameter names, descriptions, and values. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 139 • New specification: R (Weak pull-up resistance) • New specification: R (Weak pull-down resistance) • New figure: Figure 8 (Weak pull-up electrical characteristics definition) • New figure: Figure 18 (I/O output DC electrical characteristics definition) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 140 • Conditions column heading, added footnote: All VDD_HV_IO conditions for 4.5V to 5.9V are valid for VSIO[VSIO_xx] = 1, and all specifications for 3.0V to 3.6V are valid for VSIO[VSIO_xx] = 0 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 141 Figure 11 (Noise filtering on reset signal): • Replaced; significant detail added • Clarification: V is also described by V behavior shown in illustration. ESR0 PORST • Figure prefaced with more detailed PORST description. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 142 • Specification change: f (PLL1 output clock PHI0) max is 200 MHz (was PLL1PHI0 625 MHz) • f parameter, Max column, changed 200MHz to 300MHz. PLL1PHI • Removed “F” from “FXOSC” in footnote 1 MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 143 –3 mA (was –1) • Specification change: C max value is 8.5 pF (was 7) • Specification change: R max value for SARn channels is 1.1 k (was 0.6) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 144 • Specification change: T min value for T < 165°C is 7 °C (was –3) and max value is 7 °C (was 3) • Specification change: I max value is 700 µA (was 600). TEMP_SENS MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 145 • Changed “(10%–90% of swing)” to (absolute value of the differential output voltage swing) Table 33 (LFAST PLL electrical characteristics) • Changed footnote 2, from “320” to “640” MHz frequency Table 34 (Aurora LVDS electrical characteristics,) • Extensive changes throughout table MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 146 TESTMODE is latched at the negation of reset and has no affect afterward. The device will not exit functional reset with the TESTMODE pin asserted during power-up. The TESTMODE pin can be connected externally directly to ground without any other components.” MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 147 ITSB = 1, CPOL = 0 or 1, continuous SCK clock,) • Table 56 (DSPI CMOS master timing – output only – timed serial bus mode TSB = 1 or ITSB = 1, CPOL = 0 or 1, continuous SCK clock MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 148 20%-80% levels and a 10pF load at the end of a 50ohm, 1ns stripline. Please refer to the Very Strong I/O pad specifications.“ • Column added: SR/CC (system requirement or controller characteristic) • Column added: Classification (parameters are guaranteed by design) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 149 • 416 TEPBGA case drawing Rev. 0 included. Electrical characteristics—Thermal Characteristics Table 74 (Thermal characteristics) • This table consolidates what were formerly separate thermal specifications tables for each package. All values have been updated. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 150 • Changed System SRAM for MPC5777M to “404 KB” (was 384 KB). • Changed Flash memory for MPC5777M to “8640 KB” (was 7.9 MB). • Changed DMA Nexus Class for SPC5744K, MPC5746M, and MPC5777M to “3+” (was • Changed GTM RAM for MPC5777M to “58 KB” (was 52 KB).
  • Page 151 • In ADC low and high references footnote, removed V SS_HV_ADR_D2 DD_HV_ADR_D2 • In ADC supplies footnote, removed V DD_HV_ADV_D2 Table 7 (ESD ratings,): • Changed ESD for Human Body Model (HBM) parameter classification to “T” (was SR) MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 152 “1.2” V. DD_LV_BD • V : Maximum changed to 1.365 V (was 1.32 V). DD_LV_BD • Changed V to V and added specification V RAMP_BD RAMP_LV_BD RAMP_HV_BD. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 153 GPIO input pins conditions Max value from “10” to “7” pF and EBI input pins Max value from “8” to “7” pF. • I removed “Vin = 10%/90%” from parameter column. LKG_EBI Figure 18 (I/O output DC electrical characteristics definition): Replaced figure. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 154 | parameter, changed Min value from “25” to “23” and Max value from “100” to “82” • |I | parameter, changed Min value from “25” to “40” and Max value from “100” to “130” uA. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 155 DD_HV_ADR_S • I : Conditions column, first row, removed T < 150C and added 4.0V < < 5.5V. Conditions column, second row, removed T < 150C and added DD_HV_ADV_S = 2V. DD_HV_ADV_S MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 156 • Changed in footnote 15 “0.873” dB to “0.087” dB. • f , changed “S/D clock 3(4)” to “S/D Modulator Input Clock” and replaced “—” ADCD_M with “4” in Min column. • f changed “conversion rate'” to “output conversion rate”. ADCD_S MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 157 • Removed V and V specifications as they are supplied in the device DD_HV_IO_BD DD_LV operating conditions table. • Changed “C ” specification name to “C ”. ac_clk • Added specification “C ”. ac_tx MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 158 , after trimming, Min value “3.2” changed to “3.15”. Added two notes. DD_HV_FLA • Removed I specification. REG_FLA Table 39 (Functional terminals state during power-up and reset): • Changed “TRST” to “JCOMP.” MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 159 I/O section of the data sheet.” • Changed “TDI” to “TDI/TDIC,” “TMS” to “TMS/TMSC,” and “TDO” to “TDO/TDOC.” Figure 27 (Nexus TDI/TDIC, TMS/TMSC, TDO/TDOC timing): • Changed “TDI” to “TDI/TDIC,” “TMS” to “TMS/TMSC,” and “TDO” to “TDO/TDOC.” MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 160 Figure 52 (Synchronous Input Timing): • Changed “VDDE” to “VDD_HV_IO_EBI” throughout. Electrical characteristics—AC specifications—I2C Section 3.16.8, “I2C timing: New section. Electrical characteristics—AC specifications—GPIO delay Section 3.19.10, GPIO delay timing • New section MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 161 Figure 2 (Periphery allocation), changed block to “2 x SIPI” (was “SIPI_0)” and removed double arrow on its right side. Electrical characteristics—Operating conditions • Extensive revisions to Table 8 (Device operating conditions). MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 162 • In Table 12 (I/O input DC electrical characteristics), changed V min value to 3.9 V IHAUT (was 3.8). • Table 12 (I/O input DC electrical characteristics), revised I and I rows. LKG_EBI MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 163 “variation over voltage, temperature, and aging” (was “variation over process, voltage, temperature, and aging.”) • In Table 36 (Flash power supply), revised table footnotes and added new “After trimming; 25°C < TJ  150°C” condition to V DD_HV_FLA MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 164 Electrical characteristics—Reset pad (PORST, ESR0) electrical characteristics Table 20 (Reset electrical characteristics) • Changed V min value to 2.2 V (was 2.0). • Changed W max value to 15 ns (was 20). FNMI MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 165 |, and PLL0PHISPJ PLL0PHI1SPJ  specifications PLL0LTJ • Added f specification. PLL0VCOFR Table 22 (PLL1 electrical characteristics), • Added f specification. PLL1VCOFR Table 24 (Selectable load capacitance) • Significant changes throughout table. MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 166 • Substantial revisions to Section 3.16.2, DSPI timing with CMOS and LVDS pads. Electrical characteristics—AC specifications—FlexRay Table 66 (RxD input characteristics) • Revised footnote (“FlexRay RxD timing is valid . . .”). MPC5777M Microcontroller Data Sheet, Rev. 6 NXP Semiconductors...
  • Page 167 • Changed the name of the section to Device feature. • Table 1 (MPC5777M feature) Changed the name of the table to MPC5777M feature. Figure 1 • Removed the 50 MHz from the concentrator box and added 50 MHz and 100 Mhz to the connection arrows.
  • Page 168 All rights reserved. Oracle and Java are registered trademarks of Oracle and/or its affiliates. The Power Architecture and Power.org word marks and the Power and Power.org logos and related marks are trademarks and service marks licensed by Power.org. © 2016 NXP B.V. Document Number: MPC5777M Rev. 6 06/2016...

Table of Contents