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Panasonic 2SA2174J Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SA2174J
2SA2174J_P
P
 T
T
140
120
100
80
60
40
20
0
0
40
80
Ambient temperature T
2SA2174J_V
CE(sat)
V
 I
CE(sat)
−1
− 0.1
T
= 85°C
a
−25°C
− 0.01
− 0.1
−1
Collector current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
C
a
a
−80
T
= 25°C
a
−70
−60
−50
−40
−30
−20
−10
0
0
120
( °C )
Collector-emitter voltage V
a
-I
C
C
400
I
/I
= 10
C
B
350
300
250
200
150
25°C
100
50
0
−10
−100
−1
( mA )
Collector current I
C
SJC00342AED
2SA2174J_I
-V
C
CE
I
 V
C
CE
I
= −300 µA
B
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−4
−8
−12
( V )
CE
2SA2174J_h
-I
FE
C
h
 I
FE
C
V
= −10 V
T
= 85°C
CE
a
25°C
−25°C
−10
−100
−1 000
( mA )
C
2SA2174J_I
-V
C
BE
I
 V
C
BE
−100
V
= −10 V
CE
−90
−80
−70
T
= 85°C
a
−60
−25°C
−50
25°C
−40
−30
−20
−10
0
0
− 0.2
− 0.4
− 0.6
− 0.8 −1.0
−1.2 −1.4
Base-emitter voltage V
( V )
BE
2SA2174J_C
-V
ob
CB
C
 V
ob
CB
10
f = 1 MHz
T
= 25°C
a
1
0
−8
−16
−24
−32
Collector-base voltage V
CB
−40
( V )

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