Transistors
2SA2174G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054G
Features
High forward current transfer ratio h
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
V
-60
CBO
V
-50
CEO
V
-7
EBO
I
-100
C
I
-200
CP
P
125
C
T
125
j
T
-55 to +125
stg
= 25°C±3°C
a
Symbol
V
I
= -10 mA, I
CBO
C
V
I
= -2 mA, I
CEO
C
V
I
= -10 mA, I
EBO
E
I
V
= -20 V, I
CBO
CB
I
V
= -10 V, I
CEO
CE
h
V
= -10 V, I
FE
CE
V
I
= -100 mA, I
CE(sat)
C
f
V
= -10 V, I
T
CB
C
V
= -10 V, I
ob
CB
SJC00386AED
Package
Code
SSMini3-F3
Marking Symbol: 7L
Pin Name
1. Base
2. Emitter
3. Collector
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
Min
= 0
-60
E
= 0
-50
B
= 0
C
= 0
E
= 0
B
= -2 mA
C
= -10 mA
B
= 1 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Typ
Max
Unit
- 7
- 0.1
-100
160
460
- 0.2
- 0.5
80
MHz
2.2
V
V
V
mA
mA
V
pF
1