Panasonic 2SA2174J Specification Sheet

Transistors
2SA2174J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054J
 Features
 High forward current transfer ratio h
 SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
V −60
CBO
V
−50
CEO
V −7
EBO
I −100
C
I −200
CP
P 125
C
T 125
j
T −55 to +125
stg
= 25°C±3°C
a
Symbol
V I = −10 µA, I
CBO C
V I = −2 mA, I
CEO C
V I = −10 µA, I
EBO E
I V = −20 V, I
CBO CB
I V = −10 V, I
CEO CE
h V = −10 V, I
FE CE
V I = −100 mA, I
CE(sat) C
f V = −10 V, I
T CB
C V = −10 V, I
ob CB
SJC00342AED
1.60
1.00
3
1
0.27
±0.02
(0.50)(0.50)
Unit 5°
V
V
V
1: Base
2: Emitter
mA
3: Collector
mA
Marking Symbol: 7L
mW
°C
°C
Conditions Min
= 0 −60
E
= 0 −50
B
= 0
− 7
C
= 0
E
= 0
B
= −2 mA 160
C
= −10 mA
B
= 1 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Unit: mm
+0.05
–0.03
+0.03
0.12
–0.01
±0.05
2
SSMini3-F1 Package
Typ Max Unit
V
V
V
− 0.1 µA
−100 µA
460 
− 0.2 − 0.5 V
80 MHz
2.2 pF
1