Panasonic 2SA2009G Specification Sheet

Transistors
2SA2009G
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol Rating
−120
V
CBO
−120
V
CEO
−5
V
EBO
−20
I
C
−50
I
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE CE
V I
CE(sat) C
f V
T CB
NV V
CE
R
g
R S
180 to 360 260 to 520
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −10 µA, I = 0
E
= −1 mA, I = 0
B
= −10 µA, I = 0
C
= −50 V, I = 0
E
= −50 V, I = 0
B
= −5 V, I = −2 mA
C
= −20 mA, I = −2 mA
B
= −5 V, I = 2 mA, f = 200 MHz
E
= −40 V, I = −1 mA, G
= 80 dB
C V
= 100 kΩ, Function = FLAT
T
360 to 700
SJC00349AED
■ Package
• Code
SMini3-F2
• Marking Symbol: AR
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
−120
−120
−5
−100
−1
180 700
− 0.6
200
130
Unit
V
V
V
nA
µA

V
MHz
mV
1