Panasonic 2SA2079 Specification Sheet

Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
 Features
 High forward current transfer ratio h
 Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
V –45
CBO
V –45
CEO
V –7
EBO
I –100
C
I –200
CP
P 100
C
T 125
j
T –55 to +125
stg
= 25°C±3°C
a
Symbol
V I = –10 µA, I
CBO C
V I = –2 mA, I
CEO C
V I = –10 µA, I
EBO E
I V = –20 V, I
CBO CB
I V = –10 V, I
CEO CE
h V = –10 V, I
FE CE
V I = –100 mA, I
CE(sat) C
f V = –10 V, I
T CB
C V = –10 V, I
ob CB
SJC00326AED
3
1.00
±0.05
Unit
V
V
V
1: Base
mA
2: Emitter
3: Collector
mA
Marking Symbol : 3D
mW
°C
°C
Conditions Min
= 0 –45
E
= 0 –45
B
= 0
C
= 0
E
= 0
B
= –2 mA 180
C
= –10 mA
B
= 1 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Unit: mm
2
1
+0.01
0.39
−0.03
0.25 0.25
±0.05 ±0.05
1
3 2
0.65 0.05
±0.01
±0.03
ML3-N2 Package
Typ Max Unit
V
V
–7 V
– 0.1
µA
–100
µA
390 
– 0.2 – 0.5 V
80 MHz
2.2 pF
1