Panasonic 2SA2021G Specification Sheet

Transistors
2SA2021G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5609G
 Features
 High forward current transfer ratio h
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : November 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
V –60
CBO
V –50
CEO
V –7
EBO
I –100
C
I –200
CP
P 100
C
T 125
j
T –55 to +125
stg
= 25°C±3°C
a
Symbol
V I = –10 mA, I
CBO C
V I = –100 mA, I
CEO C
V I = –10 mA, I
EBO E
I V = –20 V, I
CBO CB
I V = –10 V, I
CEO CE
h V = –10 V, I
FE CE
V I = –100 mA, I
CE(sat) C
f V = –10 V, I
T CB
C V = –10 V, I
re CB
SJC00426BED
 Package
 Code
SSSMini3-F2
 Pin Name
1. Base
Unit
2. Emitter
V
3. Collector
V
V  Marking Symbol: 3E
mA
mA
mW
°C
°C
Conditions Min
= 0 –60
E
= 0 –50
B
= 0
C
= 0
E
= 0
B
= –2 mA 180
C
= –10 mA
B
= 1 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Typ Max Unit
–7
– 0.1
mA
–100 mA
390 
– 0.3 – 0.5
80 MHz
2.7 15 pF
V
V
V
V
1