Panasonic 2SA2078 Specification Sheet

Transistors
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846
■ Features
• High forward current transfer ratio h
• SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
−60
V
CBO
−50
V
CEO
−7
V
EBO
−100
I
C
−200
I
CP
P 100
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V I
CBO C
= −100 µA, I
V I
CEO C
= −10 µA, I
V I
EBO E
I V
CBO CB
= −10 V, I
I V
CEO CE
= −10 V, I
h V
FE CE
= −100 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
SJC00302AED
0.23
Unit
V
V
V
mA
mA
Marking Symbol: 7H
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −20 V, I = 0
E
= 0
B
= −2 mA
C
= −10 mA
B
= −10 V, I = 1 mA, f = 200 MHz
E
= −10 V, I = 0, f = 1 MHz
E
+0.05
0.33 0.10
–0.02
3
1 2
+0.05
–0.02
(0.40) (0.40)
0.80 ±0.05
1.20 ±0.05
5˚
SSSMini3-F1 Package
Min Typ Max
−60
−50
−7
− 0.1
−100
180 390
− 0.2 − 0.5
80
2.2
Unit: mm
+0.05
–0.02
1 : Base
2 : Emitter
3 : Collector
Unit
V
V
V
µA
µA

V
MHz
pF
1