Panasonic 2SA2163 Specification Sheet

Transistors
2SA2163
Silicon PNP epitaxial planar type
For high frequency amplifi cation
 Features  Features

 High transition frequency f  High transition frequency f High transition frequency f High transition frequency f

T T
 Optimum for high-density mounting and downsizing of the equipment for  Optimum for high-density mounting and downsizing of the equipment for

Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
 Absolute Maximum Ratings  Absolute Maximum Ratings

Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics  Electrical Characteristics

Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise fi gure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
T = 25 = 25 °C
a a a
Symbol Rating
V
−30
CBO
V −20
CEO
V −5
EBO
I
−30
C
P 100
C
T T T 125
j j
T T T −55 to +125
stg stg
T = 25 = 25 °C±3°C
a a a
Symbol
V V V V = = −10 V, I
BE BE CE CE CE
I V = −10 V, I
CBO CB
I V = = −20 V, I
CEO CE CE CE
I V = −5 V, I
EBO EB
h h h V = = −10 V, I
FE FE CE CE CE
V I = −10 mA, I
CE(sat) C
f f f V = −10 V, I
T T CB
NF V = −10 V, I
CB
Z V = −10 V, I
rb CB
C V = −10 V, I
re CB
SJC00336AED
3
1.00
±0.05
Unit
V
V
V
mA
1: Base
2: Emitter
mW
3: Collector
°C
Marking Symbol: 6J
°C
Conditions Min
= −1 mA
C
= 0 = 0
E E E
= 0
B
= 0
C
= −1 mA
C
= −1 mA
B
= 1 mA, f = 200 MHz = 1 mA, f = 200 MHz 150
E E E
= 1 mA, f = 5 MHz = 1 mA, f = 5 MHz
E E E
= 1 mA, f = 2 MHz = 1 mA, f = 2 MHz
E E E
= 1 mA, f = 10.7 MHz = 1 mA, f = 10.7 MHz
E E E
Unit: mm
2
1
+0.01
0.39
−0.03
0.25 0.25
±0.05 ±0.05
1
3 2
0.65
0.05
±0.01
±0.03
ML3-N2 Package
Typ Max Unit
− 0.7 − 0.7 − V
− 0.1 − − 0.1 µA
−100 µA
−10 µA
70 220 
V
− 0.1 − − 0.1
300 MHz
2.8 4.0 dB
22 50 Ω
1.2 2.0 pF
1