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Panasonic 2SA2021G Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SA2021G
2SA2021G_P
P
 T
C
140
120
100
80
60
40
20
0
0
40
80
Ambient temperature T
2SA2021G_I
I
 V
C
−100
V
= −10 V
CE
−90
−80
−70
T
= 85°C
a
−60
−50
25°C
−40
−30
−20
−10
0
0
− 0.2
− 0.4
− 0.6
− 0.8 −1.0
Base-emitter voltage V
2SA2021G_C
C
 V
ob
100
10
1
0
−8
−16
−24
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
C
a
a
−70
T
= 25°C
a
−60
−50
−40
−30
−20
−10
0
0
120
Collector-emitter voltage V
( °C )
a
-V
C
BE
BE
−1
−25°C
− 0.1
− 0.01
−1.2 −1.4
− 0.1
( V )
BE
-V
ob
CB
CB
f = 1 MHz
T
= 25°C
a
−32
−40
( V )
CB
2SA2021G_I
-V
C
CE
I
 V
C
CE
I
= −300 µA
B
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−4
−8
−12
( V )
CE
2SA2021G_V
-I
CE(sat)
C
V
 I
CE(sat)
C
I
/I
= 10
C
B
T
= 85°C
a
25°C
−25°C
−1
−10
−100
( mA )
Collector current I
C
SJC00426BED
2SA2021G_I
-I
C
B
I
 I
C
B
−140
V
= −10 V
CE
T
= 25°C
a
−120
−100
−80
−60
−40
−20
0
0
− 0.2
− 0.4
− 0.6
− 0.8
( V )
Base current I
B
2SA2021G_h
-I
FE
C
h
 I
FE
C
350
V
= −10 V
CE
300
T
= 85°C
a
250
25°C
200
−25°C
150
100
50
0
−1
−10
−100
( mA )
Collector current I
C
−1.0
−1 000

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