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24309E—March 2002
7.14
Thermal Diode Characteristics
Chapter 7
Preliminary Information
Thermal Diode Electrical Characteristics. Table 14 shows the
AMD Athlon XP processor model 6 electrical characteristics of
the on-die thermal diode.
Table 14. Thermal Diode Electrical Characteristics
Symbol
Parameter Description
I
Forward bias current
fw
n
Diode ideality factor
Notes:
1. The sourcing current should always be used in forward bias only.
2. Characterized at 95°C with a forward bias current pair of 10 A and 100 A.
3. Not 100% tested. Specified by design and limited characterization.
4. The diode ideality factor, n, is a correction factor to the ideal diode equation.
For the following equations, use the following variables and constants:
n
k
q
T
V
BE
I
C
I
S
N
The equation for V
BE
By sourcing two currents and using the above equation, a difference in base emitter voltage
can be found that leads to the following equation for temperature:
5. If a different sourcing current pair is used other than 10 A and 100 A, the following equation
should be used to correct the temperature. Subtract this offset from the temperature measured
by the temperature sensor.
For the following equations, use the following variables and constants:
I
high
I
low
T
(in °C) can be found using the following equation:
offset
T
Electrical Data
AMD Athlon™ XP Processor Model 6 Data Sheet
Min
Nom
5
1.002
1.008
Diode ideality factor
Boltzmann constant
Electron charge constant
Diode temperature (Kelvin)
Voltage from base to emitter
Collector current
Saturation current
Ratio of collector currents
is:
I
nkT
C
-------- -
---- -
V
=
ln
BE
q
I
S
V
BE
T
=
---------------------------- -
k
-- -
n
ln
N
q
High sourcing current
Low sourcing current
I
–
4
high
------------------------------- - 2.34
=
6.0 10
offset
I
high
---------- -
ln
I
low
Max
Units
300
µA
1.016
2, 3, 4, 5
I
low
–
Notes
1
39
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