Samsung KS57C2308 Manual page 162

Single-chip cmos microcontroller
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SAM47 INSTRUCTION SET
VENT
— Load EMB, ERB, and Vector Address
VENTn
dst
Operation:
Operand
EMB (0,1)
ERB (0,1)
ADR
Description:
The VENT instruction loads the contents of the enable memory bank flag (EMB) and enable
register bank flag (ERB) into the respective vector addresses. It then points the interrupt service
routine to the corresponding branching locations. The program counter is loaded automatically
with the respective vector addresses which indicate the starting address of the respective vector
interrupt service routines.
The EMB and ERB flags should be modified using VENT before the vector interrupts are
acknowledged. Then, when an interrupt is generated, the EMB and ERB values of the previous
routine are automatically pushed onto the stack and then popped back when the routine is
completed.
After the return from interrupt (IRET) you do not need to set the EMB and ERB values again.
Instead, use BITR and BITS to clear these values in your program routine.
The starting addresses for vector interrupts and reset operations are pointed to by the VENTn
instruction. These starting addresses must be located in ROM ranges 0000H–3FFFH. Generally,
the VENTn instructions are coded starting at location 0000H.
The format for VENT instructions is as follows:
EMB
ERB
PC
n = device-specific module address code (n = 0–n)
Operand
EMB (0,1)
ERB (0,1)
ADR
5-88
Load enable memory bank flag (EMB) and the enable
register bank flag (ERB) and program counter to
vector address, then branch to the corresponding
location.
VENTn
d1,d2,ADDR
d1 ("0" or "1")
d2 ("0" or "1")
ADDR (address to branch
E
E
a13 a12 a11 a10
M
R
B
B
a7
a6
a5
Operation Summary
Binary Code
a9
a4
a3
a2
a1
KS57C2308/P2308/C2316/P2316
Bytes
2
Operation Notation
a8
ROM (2 x n) 7–6
ROM (2 x n) 5–4
ROM (2 x n) 3–0
ROM (2 x n + 1) 7–0
(n = 0, 1, 2, 3, 4, 5, 6, 7)
a0
Cycles
2
EMB, ERB
PC13–12
PC11–8
PC7–0

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