Attribute Memory Write Timing Specification - SanDisk CompactFlash Product Manual

4.3.7 Attribute Memory Write Timing
Specification
The Card Configuration write access time is
defined as 250 ns. Detailed timing specifications
are shown in Table 4-4.
Table 4-4 Attribute Memory Write Timing
Speed Version
Item
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Data Setup Time for WE
Data Hold Time
-Reg
An
tsu(A)
-WE
-CE
-OE
Din
Notes: All times are in nanoseconds.
Din signifies data provided by the system to the CompactFlash Memory Card.
SanDisk CompactFlash Memory Card Product Manual © 1998 SANDISK CORPORATION
CompactFlash Memory Card Product Manual
tc(W)
tw(WE)
tsu(A)
trec(WE)
tsu(D-WEH)
th(D)
Figure 4-2 Attribute Memory Write Timing Diagram
Note: SanDisk does not allow writing from the Host to
CIS Memory. Only writes to the Configuration
register are allowed.
Symbol IEEE Symbol
tAVAV
tWLWH
tAVWL
tWMAX
tDVWH
tWMDX
tc(W)
trec(WE)
tw(WE)
tsu(D-WEH)
Data In Valid
250 ns
Min ns Max ns
250
150
30
30
80
30
th(D)
31