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4.3.7
Attribute Memory Write Timing
Specification
The Card Configuration write access time is
defined as 250 ns. Detailed timing specifications
are shown in Table 4-4.
Table 4-4 Attribute Memory Write Timing
Speed Version
Item
Data Setup Time for WE
-Reg
An
tsu(A)
-WE
-CE
-OE
Din
Notes:
All times are in nanoseconds. Din signifies data provided by the system to the SDP3B FlashDisk.
SanDisk SDP3B FlashDisk Product Manual © 1998 SANDISK CORPORATION
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
tsu(D-WEH)
Data Hold Time
Figure 4-2 Attribute Memory Write Timing Diagram
SDP3B FlashDisk Product Manual
Note:
SanDisk does not allow writing from the Host to
CIS Memory. Only writes to the Configuration
register are allowed.
Symbol
IEEE Symbol
tc(W)
tAVAV
tw(WE)
tWLWH
tsu(A)
tAVWL
trec(WE)
tWMAX
tDVWH
th(D)
tWMDX
tc(W)
trec(WE)
tw(WE)
tsu(D-WEH)
Data In Valid
250 ns
Min ns
Max ns
250
150
30
30
80
30
th(D)
31
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