Samsung STH-N271 Service Manual page 44

Single band mobile cellular phone
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STH-N271 Electrical Parts List
Level
SEC CODE
2
2703-001734
L313
2
2703-001733
L314
2
2703-001786
L315
2
2703-001708
L317
2
2703-001988
L318
2
2703-001708
L321
2
2703-001992
L322
2
2703-001734
L323
2
2703-001733
L324
2
2703-002039
L325
2
2703-002028
L326
2
2703-001988
L327
2
2703-001734
L334
2
2703-001786
L336
2
2703-001242
L338
2
2703-001229
L339
2
2703-001734
L340
2
2007-001298
L502
2
2806-001242
OSC301
2
2809-001242
OSC302
2
2806-001243
OSC303
2
GH41-00118A
PCB
2
0504-000172
Q101
2
0501-002318
Q102
2
0504-000172
Q103
2
0505-001464
Q104
2
0504-000172
Q105
2
0505-001165
Q106
2
0501-000225
Q107
2
0504-000168
Q108
2
0501-000225
Q202
2
0504-000168
Q203
2
0504-000167
Q204
2
0504-000167
Q206
2
0504-000172
Q301
2
2007-000148
R101
2
2007-001320
R102
2
2007-000141
R103
2
2007-000151
R104
Design LOC
INDUCTOR-SMD 6.8nH, 5 %, 1x0.5x0.5mm
INDUCTOR-SMD 8.2nH, 5 %, 1x0.5x0.5mm
INDUCTOR-SMD 10 nH, 5 %, 1.0X0.5X0.5MM
INDUCTOR-SMD 5.6nH, 10 %, 1.0x0.5x0.5mm
INDUCTOR-SMD 82nH, 5 %, 1.0x0.5x0.5mm
INDUCTOR-SMD 5.6nH, 10 %, 1.0x0.5x0.5mm
INDUCTOR-SMD 1nH, 0.3nH, 1.0x0.5x0.5mm
INDUCTOR-SMD 6.8nH, 5 %, 1x0.5x0.5mm
INDUCTOR-SMD 8.2nH, 5 %, 1x0.5x0.5mm
INDUCTOR-SMD 16 nH, 5 %, 2.29x1.73x1.52mm
INDUCTOR-SMD 12nH, 5 %, 1.0x0.5x0.5mm
INDUCTOR-SMD 82nH, 5 %, 1.0x0.5x0.5mm
INDUCTOR-SMD 6.8nH, 5 %, 1x0.5x0.5mm
INDUCTOR-SMD 10 nH, 5 %, 1.0X0.5X0.5MM
INDUCTOR-SMD 4.7 uH, 10 %, 1.6x0.8x0.8mm
INDUCTOR-SMD 2.2 uH, 10 %, 1.6x0.8x0.8mm
INDUCTOR-SMD 6.8nH, 5 %, 1x0.5x0.5mm
R-CHIP 51 ohm, 5 %, 1/16 W, DA, TP, 1005
OSCILLATOR-VCO 998-1025/2059-2121M, -, -, TP, 2.7 V, 10mA
OSCILLATOR-VCTCXO 14.4MHz, 2ppm, 0.2ppm, TP, 2.8 V, -
OSCILLATOR-VCO 175.05/210.09MHz, -, -, TP, 2.7 V, 5mA
PCB-STHN270 STH-N270, FR-4, 6, -, 0.8T, 118x140, -, -, -, -
TR-DIGITAL RN2104, PNP, 100 mW, 47K/47K, SSM, TP
TR-SMALL SIGNAL UMW8N, NPN, 150 mW, UMT6, TP, 27-270
TR-DIGITAL RN2104, PNP, 100 mW, 47K/47K, SSM, TP
FET-SILICON SI1305DL, P, 8 V, 0.86A, 0.28 ohm, 0.26 W, SOT-323
TR-DIGITAL RN2104, PNP, 100 mW, 47K/47K, SSM, TP
FET-SILICON SI3443D V, P, -20 V, +-3.5mA, 65 Mohm
TR-SMALL SIGNAL 2SC4617, NPN, 200 mW, EM3, TP, 120-5
TR-DIGITAL RN1104, NPN, 100 mW, 47K/47K, SSM, TP
TR-SMALL SIGNAL 2SC4617, NPN, 200 mW, EM3, TP, 120-5
TR-DIGITAL RN1104, NPN, 100 mW, 47K/47K, SSM, TP
TR-DIGITAL RN1102, NPN, 100 mW, 10K/10K, SSM, TP
TR-DIGITAL RN1102, NPN, 100 mW, 10K/10K, SSM, TP
TR-DIGITAL RN2104, PNP, 100 mW, 47K/47K, SSM, TP
R-CHIP 10 kohm, 5 %, 1/16 W, DA, TP, 1005
R-CHIP 1.8 kohm, 5 %, 1/16 W, DA, TP, 1005
R-CHIP 2.2 kohm, 5 %, 1/16 W, DA, TP, 1005
R-CHIP 15 kohm, 5 %, 1/16 W, DA, TP, 1005
SAMSUNG Proprietary-Contents may change without notice
DESCRIPTIONS
7-8

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