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GENERAL - This product and related documenta-
tion must be reviewed for familiarization with
safety markings and instructions before operation.
SAFETY SYMBOLS
Instruction manual symbol: the product
will be marked with this symbol when it
is necessary for the user to refer to the
instruction manual in order to protect
the product against damage.
""
Indicates hazardous voltages.
..1-
Indicates earth (ground) terminal (some-
_
times used in manual to indicate circuit
-
common connected to ground chassis).
WARNING
The WARNING sign denotes a hazard.
It calls attention to a procedure or prac-
tice that, if not correctly performed or
adhered to, could result in personal in-
jury.
Do not proceed beyond a
WARNING sign until the indicated
conditions are fully understood and met.
I
CAUTION
I
The CAUTION sign denotes a hazard.
It calls attention to an operating proce-
dure or practice that. if not correctly
performed or adhered to, could result in
Safety Considerations
damage to or destruction of part or all
of the product. Do not proceed beyond
a CAUTION sign until the indicated
conditions are fully understood and met.
I
CAUTION
I
STATIC SENSITIVE DEVICES
When any two materials make contact,
their surfaces are crushed on the atomic
level and electrons pass back and forth
between the objects. On separation. one
surface
comes
away
with
excess
electrons (negatively charged) while the
other is electron deficient (positively
charged).
The level of charge that is
developed depends on the type of
material. Insulators can easily build up
charges in excess of 20.000 volts. A per-
son working at a bench or walking
across a floor can build up a charge of
many thousands of volts. The amount
of static voltage developed depends on
the rate of generation of the charge and
the capacitance of the body holding the
charge. If the discharge ha ppens to go
through a semiconductor device and the
transient current pulse is not effectively
diverted by protection circuitry, the
resulting current flow
through
the
device can raise the temperature of in-
ternal junctions to their melting points.
MOS structures are also susceptible to
dielectric damage due to high fields.
5
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