ISL71040MEV1Z
Evaluation Board
The ISL71040MEV1Z evaluation platform is designed to evaluate the ISL71040M. The ISL71040M is designed to
drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. It
operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy
non-inverting and inverting gates drive within a single device. The ISL71040M has a 4.5V gate drive voltage
(V
) that is generated using an internal regulator that prevents the gate voltage from exceeding the maximum
DRV
gate-to-source rating of enhancement mode GaN FETs. The gate drive voltage also features an Undervoltage
Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is
in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up
to 14.7V regardless of the V
controllers. The split outputs of the ISL71040M offer the flexibility to adjust the turn-on and turn-off speed
independently by adding additional impedance to the turn-on/off paths.
Key Features
• Wide V
range single
DD
○ 4.5V to 13.2V
• Location provided for load resistors to switch the GaN FET with a load
• SMA connector on the gate drive voltage to analyze the gate waveforms
• Drain/source sense test points to analyze the drain to source waveforms
• Banana jack connectors for power supplies and drain/source connections
Specifications
• V
range: 4.5V to 13.2V
DD
Ordering Information
Part Number
ISL71040MEV1Z
Related Literature
For a full list of related documents, visit our website:
•
ISL71040M
device page
R12UZ0042EU0200 Rev.2.0
Feb.9.21
voltage. This allows the ISL71040M inputs to be connected directly to most PWM
DD
ISL71040MEV1Z evaluation board
User Manual
Description
Page 1
Copyright © 2019
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