Quectel EG915U-EU Manual page 33

Hide thumbs Also See for EG915U-EU:
Table of Contents

Advertisement

LTE Standard Module Series
voltage source and can be expanded to two sub paths with the star structure. The width of VBAT_BB
trace should be no less than 2.0 mm. The width of VBAT_RF trace should be no less than 2.5 mm. In
principle, the longer the VBAT trace is, the wider it will be.
In addition, in order to ensure the stability of power source, it is suggested that a TVS diode of which
reverse stand-off voltage is 4.7 V and peak pulse power is up to 2550 W should be used. The following
figure shows the reference circuit with and without charging function.
VBAT
VBAT_RF
VBAT_BB
C1
+
C5
+
C4
C6
C7
C8
D1
C2
C3
Module
100 nF
33 pF
10 pF
100 µ F
100 nF
33 pF
10 pF
100 µF
WS4.5D3HV
Figure 8: Star Structure of the Power Supply
EG915U-EU_Hardware_Design
32 / 81

Hide quick links:

Advertisement

Table of Contents
loading

Table of Contents