Si Switchable Gain Detector
Chapter 6 Specifications
All performance specifications are typical, performed at 25 °C ambient
temperature, and assume a 50 Ω load, unless stated otherwise.
0 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
Bandwidth
3
Noise (RMS)
NEP (@
)
p
Offset
10 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
3
Bandwidth
Noise (RMS)
NEP (@
)
p
Offset
20 dB Setting
Gain (Hi-Z)
Gain (5 0Ω)
3
Bandwidth
Noise (RMS)
NEP (@
)
p
Offset
30 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
3
Bandwidth
Noise (RMS)
NEP (@
)
p
Offset
2
The PDA36A has a 50 Ω series terminator resistor (i.e. in series with amplifier output).
This forms a voltage divider with any load impedance (e.g. 50 Ω load divides signal in
half).
3
For NIR wavelengths, the rise time of the photodiode element will become slower which
may limit the effective bandwidth of the amplified detector.
Rev E, July 15, 2017
Performance Specifications
3
1.51 x 10
V/A ±2%
3
0.75 x 10
V/A ±2%
10.0 MHz
300 μV
-11
2.91 x 10
W/Hz
±3 mV (Typ.)
±10 mV (Max)
3
4.75 x 10
V/A ±2%
3
2.38 x 10
V/A ±2%
5.5 MHz
280 μV
-12
7.52 x 10
W/Hz
±4 mV (Typ.)
±10 mV (Max)
4
1.5 x 10
V/A ±2%
4
0.75 x 10
V/A ±2%
1.0 MHz
250 μV
2.34 x 10
-12
W/Hz
±4 mV (Typ.)
±10 mV (Max)
4.75 x 10
4
V/A ±2%
4
2.38 x 10
V/A ±2%
260 kHz
260 μV
-12
1.21 x 10
W/Hz
±4 mV (Typ.)
±10 mV (Max)
2
40 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
Bandwidth
3
Noise (RMS)
NEP (@
)
p
Offset
50 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
3
Bandwidth
Noise (RMS)
NEP (@
)
p
Offset
60 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
3
Bandwidth
Noise (RMS)
NEP (@
)
p
Offset:
70 dB Setting
Gain (Hi-Z)
Gain (50 Ω)
3
Bandwidth
Noise (RMS)
NEP (@
)
p
Offset
Chapter 6: Specifications
5
1.51 x 10
V/A ±2%
5
0.75 x 10
V/A ±2%
150 kHz
340 μV
-13
5.93 x 10
W/Hz
±4 mV (Typ.)
±10 mV (Max)
5
4.75 x 10
V/A ±2%
5
2.38 x 10
V/A ±2%
45 kHz
400 μV
-13
7.94 x 10
W/Hz
±4 mV (Typ.)
±10 mV (Max)
6
1.5 x 10
V/A ±5%
6
0.75 x 10
V/A ±5%
11 kHz
800 μV
1.43 x 10
-12
W/Hz
±5 mV (Typ.)
±10 mV (Max)
4.75 x 10
6
V/A ±5%
6
2.38 x 10
V/A ±5%
5 kHz
1.10 mV
-12
2.10 x 10
W/Hz
±6 mV (Typ.)
±10 mV (Max)
Page 7
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