Decrease Voltage Drop - Quectel EC25 series User Manual

Table 6: VB BAT and GN
Pin Name Pin No o.
VBAT_RF 57,58
VBAT_BB 59,60
8,9,19,
36,46,
GND
48,50~ ~54,56,
72, 85~
3.6.2. De ecrease Vo
The power supply rang
below 3.3V V. The follow wing figure s
voltage drop p will be less
VBA
Min.3.
To decrease e voltage dr
ceramic chi ip (MLCC) c
from an ext ternal applic cation has to
structure. T The width of
should be n no less than
Three ceram mic capacito
capacitors s should be pl
suggested t that you sh
power is mo ore than 0.5W
ND Pins
Description
Power supp
part.
Power supp
baseband p
,22,
Ground.
~112
oltage Dro op
ge of the mo odule is from
shows the v
s in 3G and 4G network
Transmit
burst
AT
3V
Figure 7: P Power Supp
rop, a bypas ss capacitor
capacitor ca an provide th
o be a single
f VBAT_BB trace shoul
2mm.In prin nciple, the lo
ors (100nF, 33pF, 10pF
aced close t to the VBAT
ould use a zener diode
W. The follo owing figure
E EC25-A_Us ser_ManualC
n Mi
ply for modu le RF
3.3
ply for modu le
3.3
part.
-
m 3.3Vto4.3 3V. Make su
voltage drop p during tra
ks.
Transmit
burst
Drop
ply Limits d during Tran
r of about 10 00µF with lo
he best com mbination of
e voltage so ource and ex
d be no les ss than 1mm
ongerthe VB AT trace is,
F) are recom mmended to
T pins. In add dition, in ord
e of which reverse zen
shows the s star structure
Confidentia al / Release
EC25-AU
n. Typ p. Max
3 3.8 4.3
3 3.8 4.3
0 -
re the input t voltage wil
ansmitting b urst in 2G
Ripple
nsmit Burst
ow ESR sho ould be used
f low ESR. T The main p
xpanded to two sub pa
m; andthe w width of VBA
the wider it will be.
o be applied d to the VBA
er to get a s stable power
ner voltage is 5.1V and
e of the pow wer supply.
d 26 / 6 69
LTE Module L e
ser Manua al
. Unit
V
V
V
l never drop p
network.The e
d. Multi-laye r
ower supply y
ths with sta r
AT_RF trace e
AT pins. The e
r source, it is s
d dissipation n