Download Print this page

Panasonic MTM86628 Specification Sheet page 3

Multi chip discrete silicon p-channel mos fet silicon epitaxial planar type

Advertisement

Characteristics charts of FET
MTM86628_ P
P
 T
D
a
600
400
200
0
0
80
40
Ambient temperature T
MTM86628_ R
DS(on)
R
 I
DS(on)
0.5
V
0.4
GS
0.3
0.2
0.1
0
− 0.1
Drain current I
Characteristics charts of SBD
MTM86628_I
I
 V
F
F
10
3
T
= 75°C
a
10
2
−25°C
10
1
0
0.2
Forward voltage V
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
D
a
− 0.10
− 0.08
− 0.06
− 0.04
− 0.02
0
120
160
0
− 0.2
(°C)
Drain-source voltage V
a
- I
D
D
120
100
= 2.5 V
80
4.0 V
60
40
C
20
C
0
0
−1.0
Drain-source voltage V
(A)
D
-V
F
F
10
4
10
3
25°C
10
2
10
1
10
−1
0.4
0.6
0
( V )
Reverse voltage V
F
SJF00111AED
MTM86628_ I
-V
D
DS
I
 V
D
DS
V
= −1.6 V
GS
−1.4 V
−1.2 V
− 0.4
− 0.6
− 0.8
−1.0
(V)
DS
MTM86628_ C
- V
X
DS
C
 V
X
DS
C
iss
rss
oss
−5
−10
−15
−20
(V)
DS
MTM86628_I
-V
R
R
I
 V
R
R
T
= 75°C
a
25°C
−25°C
3
6
9
12
15
(V)
R
MTM86628
MTM86628_ R
-V
DS(on)
GS
R
 V
DS(on)
GS
0.5
I
=
0.5 A
D
0.4
0.3
0.2
0.1
0
−2
−4
−6
−8
Gate-source voltage V
GS
MTM86628_C
-V
t
R
C
 V
t
R
100
80
60
40
20
0
0
5
10
15
( V )
Reverse voltage V
R
−10
(V)
20
4

Advertisement

loading