Zener Diodes
MAYS0750Z
Silicon planar type
For surge absorption circuits
Features
Features
Small terminal capacitance C
Small terminal capacitance C
t
High electrostatic discharge ESD
High electrostatic discharge ESD
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
* 1
Total power dissipation
Junction temperature
Storage temperature
* 2
Electrostatic discharge
Note) * 1 : P
= 150 mW achieved with a printed circuit board.
T
* 2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics
Electrical Characteristics
Parameter
Breakdown voltage
*
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : V
guaranted 20 ms after current fl ow.
Z
Publication date: May 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25
= 25
°C
a
a
a
Symbol
Rating
P
150
T
T
T
T
150
j
j
T
T
T
–55 to +150
stg
stg
ESD
±12
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 1 mA
= 1 mA
BR
BR
R
R
R
I
V
= 5 V
= 5 V
R
R
R
R
C
I
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
t
R
R
R
SKE00023AED
+0.05
0.80
–0.03
Unit
mW
5°
°C
°C
kV
1: Anode
2: Cathode
EIAJ: SC-79
Marking Symbol: CZ
Conditions
Min
6.0
Unit: mm
+0.05
0.60
–0.03
+0.05
0.12
–0.02
1
0.01
±0.01
2
0.30
±0.05
+0
0
–0.05
SSMini2-F1 Package
Typ
Max
Unit
7.5
V
2
µA
1.5
3.0
pF
1