Panasonic MANV250GE Specification Sheet

Zener Diodes
MANV250GE
Silicon planar type
For surge protect
 Features
 Large surge reduction power
 Absolute Maximum Ratings T
Parameter
* 1
Peak pulse power
* 1
Peak pulse current
Maximum peak reverse voltage
* 2
Total power dissipation
Junction temperature
Storage temperature
* 3
Electrostatic discharge
Note) * 1 : Test method: IEC61000-4-5 (tp = 8/20 ms, Unrepeated)
*2: P = 150 mW achieved with a printed circuit board.
T
* 3 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
 Electrical Characteristics T
Parameter
* 1
Breakdown voltage
Reverse current
* 2
Clamping voltage
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * 1: V guaranted 20 ms after current flow.
Z
* 2: Pulse Waveform
Publication date: October 2005
= 25°C
a
Symbol Rating
P 450
PP
I
PP
V 18
RM
P 150
T
T 150
j
T –55 to +150
stg
ESD ±30
= 25°C±3°C
a
Symbol
V I
BR R
I V
R R
V I
C PP
C I
t R
100
Front time:
T1 = 1.25 × T = 8 µs ±20%
90
Time to half value:
T2 = 20 µs ±20%
T2
50
10
T
T1
Unit
W
9 A
V
mW
°C
°C
kV
Conditions
= 1 mA
= 18 V
= 9.0 A, tp = 8/20 ms
= 0 V, f = 1 MHz
t
SKE00038AED
 Package
 Code
SMini2-F3
 Pin Name
1: Anode
2: Cathode
 Marking Symbol: RD
Min Typ
20.0 25.0
76
Max Unit
30.0 V
10.0 mA
50.0 V
pF
1