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MTM86628
Electrical Characteristics T
FET
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on delay time
*
Rise time
*
Turn-off delay time
*
Fall time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : t
, t
measurement circuit
on
off
V
0 V
−4 V
SBD
Parameter
Forward voltage
Reverse current
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
Symbol
V
I
= –1.0 mA, V
DSS
D
I
V
= –20 V, V
DSS
DS
I
V
= ±10 V, V
GSS
GS
V
I
= –1.0 mA, V
TH
D
I
= – 0.5 A, V
D
R
DS(on)
I
= – 0.5 A, V
D
Y
I
= – 0.5 A, V
fs
D
C
iss
C
V
= –10 V, V
oss
DS
C
rss
t
d(on)
t
r
V
= –15 V, V
DD
t
d(off)
t
f
V
= −15 V
IN
DD
P
= 10 µs
I
W
Duty Cycle ≤ 1%
R
D
G
V
IN
50 Ω
S
Symbol
I
= 500 mA
F
V
F
I
= 700 mA
F
V
= 6 V
R
I
R
V
= 15 V
R
Conditions
= 0
GS
= 0
GS
= 0
DS
= –10 V
DS
= –4.0 V
GS
= –2.5 V
GS
= –10 V
DS
= 0, f = 1 MHz
GS
= –4.0 V, I
= – 0.5 A
GS
D
= − 0.5 A
D
V
IN
= 30 Ω
L
V
OUT
V
OUT
t
d(on)
Conditions
SJF00111AED
Min
Typ
Max
–20
–1.0
±10
– 0.45
–1.0
–1.5
300
420
420
560
1.0
2.0
80
12
12
12
6
17
10
10%
90%
90%
10%
t
t
t
r
d(off)
f
Min
Typ
Max
0.42
0.45
90
250
Unit
V
µA
µA
V
mW
S
pF
pF
pF
ns
ns
ns
ns
Unit
V
V
µA
µA
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